Xu, C., Wei, Z., Zhang, Y., Li, D., Zhang, Z., Wang, X., Wang, S., Eichler, H. J., Zhang, C., & Gao, C. (2009). Diode-pumped passively mode-locked Nd:GSAG laser at 942 nm. Optics Letters, 34(15), 2324-2326. https://doi.org/10.1364/OL.34.002324
Xu, Changwen ; Wei, Zhiyi ; Zhang, Yongdong et al. / Diode-pumped passively mode-locked Nd:GSAG laser at 942 nm. In: Optics Letters. 2009 ; Vol. 34, No. 15. pp. 2324-2326.
@article{ede5e02855e643c1b227a450082021e2,
title = "Diode-pumped passively mode-locked Nd:GSAG laser at 942 nm",
abstract = "Stable mode-locking of a diode-pumped Nd:GSAG laser emitting at 942 nm between the 4F2/3-4I9/2 transition has been demonstrated. With a z cavity and a semiconductor saturable absorber mirror passive mode locker, we obtained 8.7 ps pulses at repetition rate of 95.6 MHz and average output power of 510 mW. The total optical efficiency is about 3.1%.",
author = "Changwen Xu and Zhiyi Wei and Yongdong Zhang and Dehua Li and Zhiguo Zhang and X. Wang and S. Wang and Eichler, {H. J.} and Chunyu Zhang and Chunqing Gao",
year = "2009",
month = aug,
day = "1",
doi = "10.1364/OL.34.002324",
language = "English",
volume = "34",
pages = "2324--2326",
journal = "Optics Letters",
issn = "0146-9592",
publisher = "Optica Publishing Group",
number = "15",
}
Xu, C, Wei, Z, Zhang, Y, Li, D, Zhang, Z, Wang, X, Wang, S, Eichler, HJ, Zhang, C & Gao, C 2009, 'Diode-pumped passively mode-locked Nd:GSAG laser at 942 nm', Optics Letters, vol. 34, no. 15, pp. 2324-2326. https://doi.org/10.1364/OL.34.002324
Diode-pumped passively mode-locked Nd:GSAG laser at 942 nm. / Xu, Changwen; Wei, Zhiyi; Zhang, Yongdong et al.
In:
Optics Letters, Vol. 34, No. 15, 01.08.2009, p. 2324-2326.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Diode-pumped passively mode-locked Nd:GSAG laser at 942 nm
AU - Xu, Changwen
AU - Wei, Zhiyi
AU - Zhang, Yongdong
AU - Li, Dehua
AU - Zhang, Zhiguo
AU - Wang, X.
AU - Wang, S.
AU - Eichler, H. J.
AU - Zhang, Chunyu
AU - Gao, Chunqing
PY - 2009/8/1
Y1 - 2009/8/1
N2 - Stable mode-locking of a diode-pumped Nd:GSAG laser emitting at 942 nm between the 4F2/3-4I9/2 transition has been demonstrated. With a z cavity and a semiconductor saturable absorber mirror passive mode locker, we obtained 8.7 ps pulses at repetition rate of 95.6 MHz and average output power of 510 mW. The total optical efficiency is about 3.1%.
AB - Stable mode-locking of a diode-pumped Nd:GSAG laser emitting at 942 nm between the 4F2/3-4I9/2 transition has been demonstrated. With a z cavity and a semiconductor saturable absorber mirror passive mode locker, we obtained 8.7 ps pulses at repetition rate of 95.6 MHz and average output power of 510 mW. The total optical efficiency is about 3.1%.
UR - http://www.scopus.com/inward/record.url?scp=68149163374&partnerID=8YFLogxK
U2 - 10.1364/OL.34.002324
DO - 10.1364/OL.34.002324
M3 - Article
AN - SCOPUS:68149163374
SN - 0146-9592
VL - 34
SP - 2324
EP - 2326
JO - Optics Letters
JF - Optics Letters
IS - 15
ER -
Xu C, Wei Z, Zhang Y, Li D, Zhang Z, Wang X et al. Diode-pumped passively mode-locked Nd:GSAG laser at 942 nm. Optics Letters. 2009 Aug 1;34(15):2324-2326. doi: 10.1364/OL.34.002324
