Diode-pumped passively mode-locked Nd:GSAG laser at 942 nm

Changwen Xu; Zhiyi Wei; Yongdong Zhang; Dehua Li; Zhiguo Zhang; X. Wang; S. Wang; H. J. Eichler; Chunyu Zhang; Chunqing Gao

doi:10.1364/OL.34.002324

Diode-pumped passively mode-locked Nd:GSAG laser at 942 nm

Changwen Xu, Zhiyi Wei^*, Yongdong Zhang, Dehua Li, Zhiguo Zhang, X. Wang, S. Wang, H. J. Eichler, Chunyu Zhang, Chunqing Gao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Stable mode-locking of a diode-pumped Nd:GSAG laser emitting at 942 nm between the ⁴F_2/3-⁴I_9/2 transition has been demonstrated. With a z cavity and a semiconductor saturable absorber mirror passive mode locker, we obtained 8.7 ps pulses at repetition rate of 95.6 MHz and average output power of 510 mW. The total optical efficiency is about 3.1%.

Original language	English
Pages (from-to)	2324-2326
Number of pages	3
Journal	Optics Letters
Volume	34
Issue number	15
DOIs	https://doi.org/10.1364/OL.34.002324
Publication status	Published - 1 Aug 2009

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title = "Diode-pumped passively mode-locked Nd:GSAG laser at 942 nm",

abstract = "Stable mode-locking of a diode-pumped Nd:GSAG laser emitting at 942 nm between the 4F2/3-4I9/2 transition has been demonstrated. With a z cavity and a semiconductor saturable absorber mirror passive mode locker, we obtained 8.7 ps pulses at repetition rate of 95.6 MHz and average output power of 510 mW. The total optical efficiency is about 3.1%.",

author = "Changwen Xu and Zhiyi Wei and Yongdong Zhang and Dehua Li and Zhiguo Zhang and X. Wang and S. Wang and Eichler, {H. J.} and Chunyu Zhang and Chunqing Gao",

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T1 - Diode-pumped passively mode-locked Nd:GSAG laser at 942 nm

AU - Xu, Changwen

AU - Wei, Zhiyi

AU - Zhang, Yongdong

AU - Li, Dehua

AU - Zhang, Zhiguo

AU - Wang, X.

AU - Wang, S.

AU - Eichler, H. J.

AU - Zhang, Chunyu

AU - Gao, Chunqing

PY - 2009/8/1

Y1 - 2009/8/1

N2 - Stable mode-locking of a diode-pumped Nd:GSAG laser emitting at 942 nm between the 4F2/3-4I9/2 transition has been demonstrated. With a z cavity and a semiconductor saturable absorber mirror passive mode locker, we obtained 8.7 ps pulses at repetition rate of 95.6 MHz and average output power of 510 mW. The total optical efficiency is about 3.1%.

AB - Stable mode-locking of a diode-pumped Nd:GSAG laser emitting at 942 nm between the 4F2/3-4I9/2 transition has been demonstrated. With a z cavity and a semiconductor saturable absorber mirror passive mode locker, we obtained 8.7 ps pulses at repetition rate of 95.6 MHz and average output power of 510 mW. The total optical efficiency is about 3.1%.

UR - http://www.scopus.com/inward/record.url?scp=68149163374&partnerID=8YFLogxK

U2 - 10.1364/OL.34.002324

DO - 10.1364/OL.34.002324

M3 - Article

AN - SCOPUS:68149163374

SN - 0146-9592

VL - 34

SP - 2324

EP - 2326

JO - Optics Letters

JF - Optics Letters

IS - 15

ER -

Diode-pumped passively mode-locked Nd:GSAG laser at 942 nm

Abstract

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