Design of MEMS high g accelerometer and study on the overload ability

Yunbo Shi*, Ping Li, Jun Liu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Aiming to the application requirements of high overload environment, a MEMS acceleration sensor with high overload ability was designed in this paper. It adopted beam - island structure, which dispersed the stress by the chamfer that was on the root and the end of the structure beam when the acceleration effect on the structure. ANSYS simulation results showed that the structure can improve the ability of anti-overload of the acceleration sensor significantly, and the first-order natural frequency can up to 550 kHz. The designed sensor was processed by the standard processing technology, and the ability of anti-overload of the acceleration sensor was tested by Hopkinson bar. The results of the test showed that the signal and structure of the sensor is normal when the designed acceleration sensor was effected on the 230,000 g. The sensitivity of the senor is 0.88uV/g. In such situation, the designed sensor can meet application requirements of high overload environment effectively.

Original languageEnglish
Title of host publicationManufacturing Engineering and Automation I
Pages1582-1586
Number of pages5
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event2010 International Conference on Manufacturing Engineering and Automation, ICMEA2010 - Guangzhou, China
Duration: 7 Dec 20109 Dec 2010

Publication series

NameAdvanced Materials Research
Volume139-141
ISSN (Print)1022-6680

Conference

Conference2010 International Conference on Manufacturing Engineering and Automation, ICMEA2010
Country/TerritoryChina
CityGuangzhou
Period7/12/109/12/10

Keywords

  • High overload ability
  • Hopkinson impact test
  • MEMS high g accelerometer

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