TY - JOUR
T1 - Design of highly sensitive complementary metamaterial-based microwave sensor for characterisation of dielectric materials
AU - Samad, Abdul
AU - Hu, Wei Dong
AU - Shahzad, Waseem
AU - Raza, Hamid
AU - Ligthart, Leo P.
N1 - Publisher Copyright:
© 2020 Institution of Engineering and Technology. All rights reserved.
PY - 2020/12/16
Y1 - 2020/12/16
N2 - Metamaterial-based double-slit complementary split rectangular resonator sensor is proposed for the characterisation of dielectric properties of the materials under test (MUTs). The proposed sensor is designed and simulated on the CST microwave studio software using a low-cost substrate FR4. An array of three identical resonators is etched in the ground plane of the sensor to achieve a single and deep notch of −58.7 dB in the transmission coefficient (S21) at the resonant frequency of 7.01 GHz, which is the novelty of the proposed sensor. A deep and single resonant frequency band has a significant role in the precise measurement of the dielectric properties of the MUTs. The effective constitutive parameters are extracted from the Sparameters. An equivalent circuit model is suggested that describes the overall behaviour of the sensor. The sensor is fabricated on the FR4 substrate and measured through the vector network analyser (N5224B) by placing the standard materials. The parabolic equation for the proposed sensor is formulated to approximate the permittivity of the MUTs. A very small percentage of error, 0.77, is found which shows high accuracy of the sensor. This methodology is efficient, simple in fabrication, and reduces cost and computational time also.
AB - Metamaterial-based double-slit complementary split rectangular resonator sensor is proposed for the characterisation of dielectric properties of the materials under test (MUTs). The proposed sensor is designed and simulated on the CST microwave studio software using a low-cost substrate FR4. An array of three identical resonators is etched in the ground plane of the sensor to achieve a single and deep notch of −58.7 dB in the transmission coefficient (S21) at the resonant frequency of 7.01 GHz, which is the novelty of the proposed sensor. A deep and single resonant frequency band has a significant role in the precise measurement of the dielectric properties of the MUTs. The effective constitutive parameters are extracted from the Sparameters. An equivalent circuit model is suggested that describes the overall behaviour of the sensor. The sensor is fabricated on the FR4 substrate and measured through the vector network analyser (N5224B) by placing the standard materials. The parabolic equation for the proposed sensor is formulated to approximate the permittivity of the MUTs. A very small percentage of error, 0.77, is found which shows high accuracy of the sensor. This methodology is efficient, simple in fabrication, and reduces cost and computational time also.
UR - http://www.scopus.com/inward/record.url?scp=85096989450&partnerID=8YFLogxK
U2 - 10.1049/iet-map.2019.1024
DO - 10.1049/iet-map.2019.1024
M3 - Article
AN - SCOPUS:85096989450
SN - 1751-8725
VL - 14
SP - 1952
EP - 1959
JO - IET Microwaves, Antennas and Propagation
JF - IET Microwaves, Antennas and Propagation
IS - 15
ER -