Design of Double Delta-Doped Al0.22Ga0.78As/In0.22Ga0.78A s Pseudomorphic HEMTs

Zhiming Wang; Jinchao Mou; Weihua Yu; Xin Lv

doi:10.4028/www.scientific.net/AMM.229-231.2007

Design of Double Delta-Doped Al_0.22Ga_0.78As/In_0.22Ga_0.78A s Pseudomorphic HEMTs

Zhiming Wang^*, Jinchao Mou, Weihua Yu, Xin Lv

^*Corresponding author for this work

School of Integrated Circuits and Electronics

Beijing Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Citations (Scopus)

Abstract

In this study, performances of double delta-doped AlGaAs/InGaAspseudomorphic high electron mobility transistors are investigated. Simulation results demonstrate good performance for this structure. Form simulation, the structure demonstrates a maximum current gain cutoff frequency of 145GHz for 100nm gate length, a peak extrinsic transconductance of 526mS/mm, and a maximum saturation current density of 350mA/mm.

Original language	English
Title of host publication	Mechanical and Electrical Technology IV
Pages	2007-2009
Number of pages	3
DOIs	https://doi.org/10.4028/www.scientific.net/AMM.229-231.2007
Publication status	Published - 2012
Event	4th International Conference on Mechanical and Electrical Technology, ICMET 2012 - Kuala Lumpur, Malaysia Duration: 24 Jul 2012 → 26 Jul 2012

Publication series

Name	Applied Mechanics and Materials
Volume	229-231
ISSN (Print)	1660-9336
ISSN (Electronic)	1662-7482

Conference

Conference	4th International Conference on Mechanical and Electrical Technology, ICMET 2012
Country/Territory	Malaysia
City	Kuala Lumpur
Period	24/07/12 → 26/07/12

Keywords

Delta-doped
Pseudomorphic hemts
Short channel effects

Access to Document

10.4028/www.scientific.net/AMM.229-231.2007

Cite this

@inproceedings{161c1b17a1ff46fb8e8a2dfd387b174a,

title = "Design of Double Delta-Doped Al0.22Ga0.78As/In0.22Ga0.78A s Pseudomorphic HEMTs",

abstract = "In this study, performances of double delta-doped AlGaAs/InGaAspseudomorphic high electron mobility transistors are investigated. Simulation results demonstrate good performance for this structure. Form simulation, the structure demonstrates a maximum current gain cutoff frequency of 145GHz for 100nm gate length, a peak extrinsic transconductance of 526mS/mm, and a maximum saturation current density of 350mA/mm.",

keywords = "Delta-doped, Pseudomorphic hemts, Short channel effects",

author = "Zhiming Wang and Jinchao Mou and Weihua Yu and Xin Lv",

year = "2012",

doi = "10.4028/www.scientific.net/AMM.229-231.2007",

language = "English",

isbn = "9783037855102",

series = "Applied Mechanics and Materials",

pages = "2007--2009",

booktitle = "Mechanical and Electrical Technology IV",

note = "4th International Conference on Mechanical and Electrical Technology, ICMET 2012 ; Conference date: 24-07-2012 Through 26-07-2012",

}

Wang, Z, Mou, J, Yu, W & Lv, X 2012, Design of Double Delta-Doped Al_0.22Ga_0.78As/In_0.22Ga_0.78A s Pseudomorphic HEMTs. in Mechanical and Electrical Technology IV. Applied Mechanics and Materials, vol. 229-231, pp. 2007-2009, 4th International Conference on Mechanical and Electrical Technology, ICMET 2012, Kuala Lumpur, Malaysia, 24/07/12. https://doi.org/10.4028/www.scientific.net/AMM.229-231.2007

TY - GEN

T1 - Design of Double Delta-Doped Al0.22Ga0.78As/In0.22Ga0.78A s Pseudomorphic HEMTs

AU - Wang, Zhiming

AU - Mou, Jinchao

AU - Yu, Weihua

AU - Lv, Xin

PY - 2012

Y1 - 2012

N2 - In this study, performances of double delta-doped AlGaAs/InGaAspseudomorphic high electron mobility transistors are investigated. Simulation results demonstrate good performance for this structure. Form simulation, the structure demonstrates a maximum current gain cutoff frequency of 145GHz for 100nm gate length, a peak extrinsic transconductance of 526mS/mm, and a maximum saturation current density of 350mA/mm.

AB - In this study, performances of double delta-doped AlGaAs/InGaAspseudomorphic high electron mobility transistors are investigated. Simulation results demonstrate good performance for this structure. Form simulation, the structure demonstrates a maximum current gain cutoff frequency of 145GHz for 100nm gate length, a peak extrinsic transconductance of 526mS/mm, and a maximum saturation current density of 350mA/mm.

KW - Delta-doped

KW - Pseudomorphic hemts

KW - Short channel effects

UR - http://www.scopus.com/inward/record.url?scp=84871378569&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/AMM.229-231.2007

DO - 10.4028/www.scientific.net/AMM.229-231.2007

M3 - Conference contribution

AN - SCOPUS:84871378569

SN - 9783037855102

T3 - Applied Mechanics and Materials

SP - 2007

EP - 2009

BT - Mechanical and Electrical Technology IV

T2 - 4th International Conference on Mechanical and Electrical Technology, ICMET 2012

Y2 - 24 July 2012 through 26 July 2012

ER -