Design of an S-band 150 W GaN internally matched power amplifier

Xing Yang; Shichang Zhong; Feng Qian

Design of an S-band 150 W GaN internally matched power amplifier

Xing Yang^*, Shichang Zhong, Feng Qian

^*Corresponding author for this work

Nanjing Electronic Devices Institute

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, an S-band high power amplifier is designed by using Wilkinson power splitter and combiner in the input and output port respectively to achieve high output power. The amplifier consists of four internally matched PA cells using 0.25 μm GaN HEMT chips. The working conditions are 28 V V_ds, 10% pulse duty ratio and 0.1 ms pulse width. On the working band of 2.7 GHz to 3.5 GHz, the output power of the cell amplifier can reach 46.5 dBm with PAE more than 50% at 37 dBm input power; and the output power of the combining amplifier can reach as high as 51.8 dBm with PAE more than 40% at 43 dBm input power.

Original language	English
Pages (from-to)	41-45
Number of pages	5
Journal	Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
Volume	34
Issue number	1
Publication status	Published - Feb 2014
Externally published	Yes

Keywords

GaN
HEMT
Internal matching
Power combining

Cite this

@article{2b0d0a15265a40b4b2aaa6f718a1a1d6,

title = "Design of an S-band 150 W GaN internally matched power amplifier",

abstract = "In this paper, an S-band high power amplifier is designed by using Wilkinson power splitter and combiner in the input and output port respectively to achieve high output power. The amplifier consists of four internally matched PA cells using 0.25 μm GaN HEMT chips. The working conditions are 28 V Vds, 10% pulse duty ratio and 0.1 ms pulse width. On the working band of 2.7 GHz to 3.5 GHz, the output power of the cell amplifier can reach 46.5 dBm with PAE more than 50% at 37 dBm input power; and the output power of the combining amplifier can reach as high as 51.8 dBm with PAE more than 40% at 43 dBm input power.",

keywords = "GaN, HEMT, Internal matching, Power combining",

author = "Xing Yang and Shichang Zhong and Feng Qian",

year = "2014",

month = feb,

language = "English",

volume = "34",

pages = "41--45",

journal = "Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics",

issn = "1000-3819",

publisher = "Research Progress of Solid State Electronics",

number = "1",

}

TY - JOUR

T1 - Design of an S-band 150 W GaN internally matched power amplifier

AU - Yang, Xing

AU - Zhong, Shichang

AU - Qian, Feng

PY - 2014/2

Y1 - 2014/2

N2 - In this paper, an S-band high power amplifier is designed by using Wilkinson power splitter and combiner in the input and output port respectively to achieve high output power. The amplifier consists of four internally matched PA cells using 0.25 μm GaN HEMT chips. The working conditions are 28 V Vds, 10% pulse duty ratio and 0.1 ms pulse width. On the working band of 2.7 GHz to 3.5 GHz, the output power of the cell amplifier can reach 46.5 dBm with PAE more than 50% at 37 dBm input power; and the output power of the combining amplifier can reach as high as 51.8 dBm with PAE more than 40% at 43 dBm input power.

AB - In this paper, an S-band high power amplifier is designed by using Wilkinson power splitter and combiner in the input and output port respectively to achieve high output power. The amplifier consists of four internally matched PA cells using 0.25 μm GaN HEMT chips. The working conditions are 28 V Vds, 10% pulse duty ratio and 0.1 ms pulse width. On the working band of 2.7 GHz to 3.5 GHz, the output power of the cell amplifier can reach 46.5 dBm with PAE more than 50% at 37 dBm input power; and the output power of the combining amplifier can reach as high as 51.8 dBm with PAE more than 40% at 43 dBm input power.

KW - GaN

KW - HEMT

KW - Internal matching

KW - Power combining

UR - http://www.scopus.com/inward/record.url?scp=84897848704&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:84897848704

SN - 1000-3819

VL - 34

SP - 41

EP - 45

JO - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

JF - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

IS - 1

ER -

Design of an S-band 150 W GaN internally matched power amplifier

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