Design of a Low-pass Filter Based on the Through-Silicon-Via Structure

Zhibo Zhao*, Xiue Bao, Zeyu Wang, Haoyun Yuan, Jinkai Li, Lili Fang, Houjun Sun

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The paper provides a novel low-pass filter by using the through-silicon-via (TSV) based 3D integration technology. It is designed based on a typical low-pass Butterworth filter, which consists of two inductors and one capacitor. In order to reduce the consumination of chip area, both the inductor and the capacitor are desinged based on the TSV techniques. Simulation results have validated that the proposed passband filter, working in the frequency range from DC to 3GHz, can provide good working performance.

Original languageEnglish
Title of host publication2023 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350338874
DOIs
Publication statusPublished - 2023
Event15th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 - Qingdao, China
Duration: 14 May 202317 May 2023

Publication series

Name2023 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023 - Proceedings

Conference

Conference15th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023
Country/TerritoryChina
CityQingdao
Period14/05/2317/05/23

Keywords

  • 3D
  • Capacitor
  • inductor
  • low-pass Butterworth filter
  • through-silicon-via (TSV)

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