Abstract
Based on the working mechanism of GaN components and monolithic microwave integrated power amplifiers, a four-stage and four-channel power amplifier design scheme has been realized by simulation in the paper. The physical structure of the GaN HEMT is proposed. Then DC and RF characteristics of the device are simulated in Silvaco. The S-parameters are extracted to design a power amplifier circuit in ADS according to the structure and electric performance of the HEMT. The results show that the output power of the amplifier circuit can reach 5.6W and the power gain is 21dB at 35GHz under CW condition. The PAE of the whole circuit is about 20%. Therefore, this power amplifier can be applied to Ka-band.
| Original language | English |
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| Pages | 456-459 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 2013 |
| Event | 2013 International Workshop on Microwave and Millimeter Wave Circuits and System Technology, MMWCST 2013 - Emeishan, Sichuan, China Duration: 24 Oct 2013 → 25 Oct 2013 |
Conference
| Conference | 2013 International Workshop on Microwave and Millimeter Wave Circuits and System Technology, MMWCST 2013 |
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| Country/Territory | China |
| City | Emeishan, Sichuan |
| Period | 24/10/13 → 25/10/13 |
Keywords
- GaN HEMT
- Ka-band
- S-parameter
- power amplifier