TY - GEN
T1 - Design of a high linearity power amplifier in GaN HEMT technology
AU - Zhao, Yinghong
AU - Xue, Yu
AU - Qian, Feng
AU - Zheng, Weibin
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/6/29
Y1 - 2018/6/29
N2 - A 37.5dBm high-linearity power amplifier working in Ku band is presented. This power amplifier is fabricated in a 0.25μm gate process with GaN high electron mobility transistor. To improve the linearity characterization, two circuits were designed with different output matching network. The first one is matched to the optimum load for PAE characterization while the second is matched to the optimum load for linearity characterization which is quantized by IM3. Measured results indicate that the largest output power is up to 37.5dBm and the best PAE can get up to 36%. Measured linearity results of the two circuits are also presented. PAE of the second circuit is 2∼4 lower than first one while linearity is 1∼2dBc up than the first one. The results show that output matching network can be matched close to the optimum load for linearity characterization in order to get higher linearity.
AB - A 37.5dBm high-linearity power amplifier working in Ku band is presented. This power amplifier is fabricated in a 0.25μm gate process with GaN high electron mobility transistor. To improve the linearity characterization, two circuits were designed with different output matching network. The first one is matched to the optimum load for PAE characterization while the second is matched to the optimum load for linearity characterization which is quantized by IM3. Measured results indicate that the largest output power is up to 37.5dBm and the best PAE can get up to 36%. Measured linearity results of the two circuits are also presented. PAE of the second circuit is 2∼4 lower than first one while linearity is 1∼2dBc up than the first one. The results show that output matching network can be matched close to the optimum load for linearity characterization in order to get higher linearity.
KW - GaN high electron mobility transistor
KW - MMIC
KW - high linearity power amplifier
KW - intermodulation products
KW - satellite communication
UR - http://www.scopus.com/inward/record.url?scp=85050384857&partnerID=8YFLogxK
U2 - 10.1109/IEEE-IWS.2018.8400935
DO - 10.1109/IEEE-IWS.2018.8400935
M3 - Conference contribution
AN - SCOPUS:85050384857
T3 - 2018 IEEE MTT-S International Wireless Symposium, IWS 2018 - Proceedings
SP - 1
EP - 3
BT - 2018 IEEE MTT-S International Wireless Symposium, IWS 2018 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2018 IEEE MTT-S International Wireless Symposium, IWS 2018
Y2 - 6 May 2018 through 9 May 2018
ER -