Design of 340-GHz On-Chip Power Combiners for InP HBT PAs

Bo Li; Yutong Wang; Feng Lin; Houjun Sun

doi:10.1109/IMWS-AMP57814.2023.10381429

Design of 340-GHz On-Chip Power Combiners for InP HBT PAs

Bo Li, Yutong Wang, Feng Lin, Houjun Sun

School of Integrated Circuits and Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper presents the design of 340-GHz on-chip power combiners for InP heterojunction bipolar transistor (HBT) power amplifiers (PAs). A two-way Wilkinson combiner is firstly designed, and the measured insertion loss (IL) of back-to-back structure is 2.1 dB at 340 GHz. Then, by cascading two-way T- junction combiners or Wilkinson combiners, three kinds of four- way power combiners are proposed. At 340 GHz, the measured ILs of back-to-back structures of four-way T-junction combiner, four-way Wilkinson combiner and four-way hybrid structure combiner are 1.6 dB, 3.9 dB and 2.3 dB, respectively. It is the first time to demonstrate on-chip power combiners for InP HBT PAs at 340 GHz.

Original language	English
Title of host publication	IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350308761
DOIs	https://doi.org/10.1109/IMWS-AMP57814.2023.10381429
Publication status	Published - 2023
Event	2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Chengdu, China Duration: 12 Nov 2023 → 15 Nov 2023

Publication series

Name	IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings

Conference

Conference	2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023
Country/Territory	China
City	Chengdu
Period	12/11/23 → 15/11/23

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10.1109/IMWS-AMP57814.2023.10381429

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Li, B., Wang, Y., Lin, F., & Sun, H. (2023). Design of 340-GHz On-Chip Power Combiners for InP HBT PAs. In IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings (IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMWS-AMP57814.2023.10381429

Li, Bo ; Wang, Yutong ; Lin, Feng et al. / Design of 340-GHz On-Chip Power Combiners for InP HBT PAs. IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings).

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title = "Design of 340-GHz On-Chip Power Combiners for InP HBT PAs",

abstract = "This paper presents the design of 340-GHz on-chip power combiners for InP heterojunction bipolar transistor (HBT) power amplifiers (PAs). A two-way Wilkinson combiner is firstly designed, and the measured insertion loss (IL) of back-to-back structure is 2.1 dB at 340 GHz. Then, by cascading two-way T- junction combiners or Wilkinson combiners, three kinds of four- way power combiners are proposed. At 340 GHz, the measured ILs of back-to-back structures of four-way T-junction combiner, four-way Wilkinson combiner and four-way hybrid structure combiner are 1.6 dB, 3.9 dB and 2.3 dB, respectively. It is the first time to demonstrate on-chip power combiners for InP HBT PAs at 340 GHz.",

author = "Bo Li and Yutong Wang and Feng Lin and Houjun Sun",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 ; Conference date: 12-11-2023 Through 15-11-2023",

year = "2023",

doi = "10.1109/IMWS-AMP57814.2023.10381429",

language = "English",

series = "IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings",

address = "United States",

}

Li, B, Wang, Y, Lin, F & Sun, H 2023, Design of 340-GHz On-Chip Power Combiners for InP HBT PAs. in IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings. IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023, Chengdu, China, 12/11/23. https://doi.org/10.1109/IMWS-AMP57814.2023.10381429

Design of 340-GHz On-Chip Power Combiners for InP HBT PAs. / Li, Bo; Wang, Yutong; Lin, Feng et al.
IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Design of 340-GHz On-Chip Power Combiners for InP HBT PAs

AU - Li, Bo

AU - Wang, Yutong

AU - Lin, Feng

AU - Sun, Houjun

PY - 2023

Y1 - 2023

N2 - This paper presents the design of 340-GHz on-chip power combiners for InP heterojunction bipolar transistor (HBT) power amplifiers (PAs). A two-way Wilkinson combiner is firstly designed, and the measured insertion loss (IL) of back-to-back structure is 2.1 dB at 340 GHz. Then, by cascading two-way T- junction combiners or Wilkinson combiners, three kinds of four- way power combiners are proposed. At 340 GHz, the measured ILs of back-to-back structures of four-way T-junction combiner, four-way Wilkinson combiner and four-way hybrid structure combiner are 1.6 dB, 3.9 dB and 2.3 dB, respectively. It is the first time to demonstrate on-chip power combiners for InP HBT PAs at 340 GHz.

AB - This paper presents the design of 340-GHz on-chip power combiners for InP heterojunction bipolar transistor (HBT) power amplifiers (PAs). A two-way Wilkinson combiner is firstly designed, and the measured insertion loss (IL) of back-to-back structure is 2.1 dB at 340 GHz. Then, by cascading two-way T- junction combiners or Wilkinson combiners, three kinds of four- way power combiners are proposed. At 340 GHz, the measured ILs of back-to-back structures of four-way T-junction combiner, four-way Wilkinson combiner and four-way hybrid structure combiner are 1.6 dB, 3.9 dB and 2.3 dB, respectively. It is the first time to demonstrate on-chip power combiners for InP HBT PAs at 340 GHz.

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U2 - 10.1109/IMWS-AMP57814.2023.10381429

DO - 10.1109/IMWS-AMP57814.2023.10381429

M3 - Conference contribution

AN - SCOPUS:85183641797

T3 - IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings

BT - IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023

Y2 - 12 November 2023 through 15 November 2023

ER -

Li B, Wang Y, Lin F , Sun H. Design of 340-GHz On-Chip Power Combiners for InP HBT PAs. In IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2023. (IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023 - Proceedings). doi: 10.1109/IMWS-AMP57814.2023.10381429

Design of 340-GHz On-Chip Power Combiners for InP HBT PAs

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