Abstract
A device of 0.2μm gate-length and 50μm gate-width AlGaN/GaN HEMTs is designed through the semiconductor software while DC and RF characteristics are simulated in the paper. The device structure is described and analyzed. The relevant material parameters and physical models are both determined. The output current curves and transfer curves are both obtained at different Vgs and Vds. They show excellent electrical properties at static operating condition. The breakdown voltage and junction temperature are analyzed so that the DC bias point can be determined. High frequency characteristics are achieved by RF small signal and large signal simulation. The results indicate that the paper can provide a scheme for designing AlGaN/GaN HEMTs which can be applied to millimeter-wave band.
| Original language | English |
|---|---|
| Pages (from-to) | 2813-2818 |
| Number of pages | 6 |
| Journal | ICIC Express Letters |
| Volume | 8 |
| Issue number | 10 |
| Publication status | Published - 2014 |
Keywords
- AlGaN/GaN
- Breakdown voltage
- HEMT
- Junction temperature
- Millimeter-wave band