Design and Transient Analysis of a 650 V/150 A GaN Power Modules With Integrated Bias Power and Gate-Drive Circuit

Liyan Zhu; Yu Yan; Hua Bai

doi:10.1109/TCPMT.2024.3371248

Design and Transient Analysis of a 650 V/150 A GaN Power Modules With Integrated Bias Power and Gate-Drive Circuit

Liyan Zhu, Yu Yan, Hua Bai^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

This article focuses on the design of a 650 V/150 A gallium nitride (GaN) power module. Direct bonded copper (DBC) is employed for the thermal pad insulation and the printed circuit board (PCB) is adopted for the flux cancellation, isolated bias power supply, and gate-drive-circuit integration. The packaged module exhibits high current capability (>150 A), high compactness (45× 33×9.6 mm3), and excellent thermal resistance (0.43 °C/W). The insulated drain-source and integrated isolated gate-drive circuit also facilitate the assembly of GaN devices, particularly in high-power applications. Double pulse test (DPT) at 450 V/150 A shows 50 V voltage spike only, which makes the proposed module well suited for high-power applications.

Original language	English
Pages (from-to)	417-427
Number of pages	11
Journal	IEEE Transactions on Components, Packaging and Manufacturing Technology
Volume	14
Issue number	3
DOIs	https://doi.org/10.1109/TCPMT.2024.3371248
Publication status	Published - 1 Mar 2024
Externally published	Yes

Keywords

Direct bonded copper (DBC)
gallium nitride (GaN) high electron mobility transistors (HEMTs) package
half-bridge module
integrated gate driver
isolated power supply
transient analysis

Access to Document

10.1109/TCPMT.2024.3371248

Cite this

@article{5e2b43a687d145daa0205110ca09cc2b,

title = "Design and Transient Analysis of a 650 V/150 A GaN Power Modules With Integrated Bias Power and Gate-Drive Circuit",

abstract = "This article focuses on the design of a 650 V/150 A gallium nitride (GaN) power module. Direct bonded copper (DBC) is employed for the thermal pad insulation and the printed circuit board (PCB) is adopted for the flux cancellation, isolated bias power supply, and gate-drive-circuit integration. The packaged module exhibits high current capability (>150 A), high compactness (45× 33×9.6 mm3), and excellent thermal resistance (0.43 °C/W). The insulated drain-source and integrated isolated gate-drive circuit also facilitate the assembly of GaN devices, particularly in high-power applications. Double pulse test (DPT) at 450 V/150 A shows 50 V voltage spike only, which makes the proposed module well suited for high-power applications.",

keywords = "Direct bonded copper (DBC), gallium nitride (GaN) high electron mobility transistors (HEMTs) package, half-bridge module, integrated gate driver, isolated power supply, transient analysis",

author = "Liyan Zhu and Yu Yan and Hua Bai",

note = "Publisher Copyright: {\textcopyright} 2011-2012 IEEE.",

year = "2024",

month = mar,

day = "1",

doi = "10.1109/TCPMT.2024.3371248",

language = "English",

volume = "14",

pages = "417--427",

journal = "IEEE Transactions on Components, Packaging and Manufacturing Technology",

issn = "2156-3950",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Design and Transient Analysis of a 650 V/150 A GaN Power Modules With Integrated Bias Power and Gate-Drive Circuit

AU - Zhu, Liyan

AU - Yan, Yu

AU - Bai, Hua

PY - 2024/3/1

Y1 - 2024/3/1

N2 - This article focuses on the design of a 650 V/150 A gallium nitride (GaN) power module. Direct bonded copper (DBC) is employed for the thermal pad insulation and the printed circuit board (PCB) is adopted for the flux cancellation, isolated bias power supply, and gate-drive-circuit integration. The packaged module exhibits high current capability (>150 A), high compactness (45× 33×9.6 mm3), and excellent thermal resistance (0.43 °C/W). The insulated drain-source and integrated isolated gate-drive circuit also facilitate the assembly of GaN devices, particularly in high-power applications. Double pulse test (DPT) at 450 V/150 A shows 50 V voltage spike only, which makes the proposed module well suited for high-power applications.

AB - This article focuses on the design of a 650 V/150 A gallium nitride (GaN) power module. Direct bonded copper (DBC) is employed for the thermal pad insulation and the printed circuit board (PCB) is adopted for the flux cancellation, isolated bias power supply, and gate-drive-circuit integration. The packaged module exhibits high current capability (>150 A), high compactness (45× 33×9.6 mm3), and excellent thermal resistance (0.43 °C/W). The insulated drain-source and integrated isolated gate-drive circuit also facilitate the assembly of GaN devices, particularly in high-power applications. Double pulse test (DPT) at 450 V/150 A shows 50 V voltage spike only, which makes the proposed module well suited for high-power applications.

KW - Direct bonded copper (DBC)

KW - gallium nitride (GaN) high electron mobility transistors (HEMTs) package

KW - half-bridge module

KW - integrated gate driver

KW - isolated power supply

KW - transient analysis

UR - http://www.scopus.com/inward/record.url?scp=85186969671&partnerID=8YFLogxK

U2 - 10.1109/TCPMT.2024.3371248

DO - 10.1109/TCPMT.2024.3371248

M3 - Article

AN - SCOPUS:85186969671

SN - 2156-3950

VL - 14

SP - 417

EP - 427

JO - IEEE Transactions on Components, Packaging and Manufacturing Technology

JF - IEEE Transactions on Components, Packaging and Manufacturing Technology

IS - 3

ER -

Design and Transient Analysis of a 650 V/150 A GaN Power Modules With Integrated Bias Power and Gate-Drive Circuit

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this