Design and implement of an S-band 280 W GaN internally matched transistor

Based on a domestically made GaN HEMT which operates at 50 V drain voltage, an S-band internally matched power amplifier was realized. Design of the matching network was conducted by the test results of S-parameters and Load-pull. Using two paralleled GaN HEMT dies, the internal matching transistor demonstrated high output power. Optimization design of the transistor was completed with microwave simulation software ADS. Simulation results were obtained and the test data was presented. During its working band of 31 GHz to 34 GHz, the output power is greater than 54.5 dBm, with PAE more than 50%, and the power gain can reach 135 dB under conditions of 48 V drain voltage, 1 ms period, 10% duty ratio.