Design and fabrication of an integrated CMOS-MEMS 3-axis accelerometer

Huikai Xie*, Gary K. Fedder, Zhiyu Pan, Wilhelm Frey

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Citations (Scopus)

Abstract

A monolithic integrated CMOS-MEMS three-axis accelerometer has been designed and fabricated. The sensor is a single structure that uses sidewall capacitors of comb fingers to sense acceleration in all three directions. The sensor plus on-chip CMOS circuitry is about 1mm by 1mm in size and is fabricated by a post-CMOS micromachining process that uses interconnect metal layers as etching mask and has only dry-etch steps involved. The sensor structure incorporates both thin-film structures and bulk Si structures to achieve three-axis acceleration sensing without any extra masks, material deposition or wafer bonding. Both behavioral simulaton and finite element simulation were conducted to verify and optimize the sensor design. A noise floor of 50 μg/Hz 1/2 can be achieved.

Original languageEnglish
Title of host publication2003 Nanotechnology Conference and Trade Show - Nanotech 2003
EditorsM. Laudon, B. Romanowicz
Pages420-423
Number of pages4
Publication statusPublished - 2003
Externally publishedYes
Event2003 Nanotechnology Conference and Trade Show - Nanotech 2003 - San Francisco, CA, United States
Duration: 23 Feb 200327 Feb 2003

Publication series

Name2003 Nanotechnology Conference and Trade Show - Nanotech 2003
Volume2

Conference

Conference2003 Nanotechnology Conference and Trade Show - Nanotech 2003
Country/TerritoryUnited States
CitySan Francisco, CA
Period23/02/0327/02/03

Keywords

  • 3-axis accelerometer
  • CMOS-MEMS
  • Integrated accelerometer
  • Vertical comb finger sensing

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