Depositing Pb(Zr, Ti)O3 ferroelectric thin films on ITO glass substrate

P. X. Yan; L. Xie; Y. Li; J. Wang; S. R. Jiang

Depositing Pb(Zr, Ti)O₃ ferroelectric thin films on ITO glass substrate

P. X. Yan^*, L. Xie, Y. Li, J. Wang, S. R. Jiang

^*Corresponding author for this work

Lanzhou University

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Pb(Zr, Ti)O₃ ferroelectric thin films with perovskite structure were prepared on Sn-doped In₂O₃(ITO) substrates by R.F. reactive sputtering technique. The effects of annealing treatment and deposition parameters on the microstructure and properties of the thin films were investigated. The crystal structure, chemical states of elements, and surface morphologies of the thin films were characterized by XRD, XPS and SEM respectively. Average grain size is about 250 nm, and the grains are distributed uniformly with quadrilateral and triangle shapes. The ferroelectric properties of the thin films were measured. The annealing temperature and the oxygen ratio in Ar+O₂ reactive atmosphere were found to have clear effects on the ferroelectric properties.

Original language	English
Pages (from-to)	407-411
Number of pages	5
Journal	Kuei Suan Jen Hsueh Pao/ Journal of the Chinese Ceramic Society
Volume	28
Issue number	5
Publication status	Published - Oct 2000
Externally published	Yes

Keywords

Indium oxide
Lead zirconium titanium oxide
Sputtering deposition
Thin films

Cite this

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title = "Depositing Pb(Zr, Ti)O3 ferroelectric thin films on ITO glass substrate",

abstract = "Pb(Zr, Ti)O3 ferroelectric thin films with perovskite structure were prepared on Sn-doped In2O3(ITO) substrates by R.F. reactive sputtering technique. The effects of annealing treatment and deposition parameters on the microstructure and properties of the thin films were investigated. The crystal structure, chemical states of elements, and surface morphologies of the thin films were characterized by XRD, XPS and SEM respectively. Average grain size is about 250 nm, and the grains are distributed uniformly with quadrilateral and triangle shapes. The ferroelectric properties of the thin films were measured. The annealing temperature and the oxygen ratio in Ar+O2 reactive atmosphere were found to have clear effects on the ferroelectric properties.",

keywords = "Indium oxide, Lead zirconium titanium oxide, Sputtering deposition, Thin films",

author = "Yan, {P. X.} and L. Xie and Y. Li and J. Wang and Jiang, {S. R.}",

year = "2000",

month = oct,

language = "English",

volume = "28",

pages = "407--411",

journal = "Kuei Suan Jen Hsueh Pao/ Journal of the Chinese Ceramic Society",

issn = "0454-5648",

publisher = "Chinese Ceramic Society",

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TY - JOUR

T1 - Depositing Pb(Zr, Ti)O3 ferroelectric thin films on ITO glass substrate

AU - Yan, P. X.

AU - Xie, L.

AU - Li, Y.

AU - Wang, J.

AU - Jiang, S. R.

PY - 2000/10

Y1 - 2000/10

N2 - Pb(Zr, Ti)O3 ferroelectric thin films with perovskite structure were prepared on Sn-doped In2O3(ITO) substrates by R.F. reactive sputtering technique. The effects of annealing treatment and deposition parameters on the microstructure and properties of the thin films were investigated. The crystal structure, chemical states of elements, and surface morphologies of the thin films were characterized by XRD, XPS and SEM respectively. Average grain size is about 250 nm, and the grains are distributed uniformly with quadrilateral and triangle shapes. The ferroelectric properties of the thin films were measured. The annealing temperature and the oxygen ratio in Ar+O2 reactive atmosphere were found to have clear effects on the ferroelectric properties.

AB - Pb(Zr, Ti)O3 ferroelectric thin films with perovskite structure were prepared on Sn-doped In2O3(ITO) substrates by R.F. reactive sputtering technique. The effects of annealing treatment and deposition parameters on the microstructure and properties of the thin films were investigated. The crystal structure, chemical states of elements, and surface morphologies of the thin films were characterized by XRD, XPS and SEM respectively. Average grain size is about 250 nm, and the grains are distributed uniformly with quadrilateral and triangle shapes. The ferroelectric properties of the thin films were measured. The annealing temperature and the oxygen ratio in Ar+O2 reactive atmosphere were found to have clear effects on the ferroelectric properties.

KW - Indium oxide

KW - Lead zirconium titanium oxide

KW - Sputtering deposition

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=0034289133&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0034289133

SN - 0454-5648

VL - 28

SP - 407

EP - 411

JO - Kuei Suan Jen Hsueh Pao/ Journal of the Chinese Ceramic Society

JF - Kuei Suan Jen Hsueh Pao/ Journal of the Chinese Ceramic Society

IS - 5

ER -

Depositing Pb(Zr, Ti)O₃ ferroelectric thin films on ITO glass substrate

Abstract

Keywords

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