TY - GEN
T1 - D Band Active Integrated Frequency Doubler MMIC Based on InP HEMT Technology
AU - Liu, Jun
AU - Yu, Weihua
AU - Hou, Yanfei
AU - Wang, Xudong
AU - Qiao, Haidong
AU - Lv, Xin
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/12/5
Y1 - 2018/12/5
N2 - This paper presents the design and simulation of a D-band active integrated frequency-doubler MMIC with a 70-nm InAIAs/lnGaAs/lnP pseudomorphic high electron-mobility transistor (PHEMT) technology. The doubler MMIC is designed through schematic simulation and momentum EM co-simulation by ADS software with a 2×25μrn gate length PHEMT. Without the use of post-amplification, the frequency-doubler generates an output power more than 0 dBm range from 135 to 165 GHz with an input power of 4.5 dBm, that is, a 3-dB bandwidth of 20% has been achieved. The maximum output power of 1.58 dBm at 143 GHz. At the same frequency, the MMIC exhibits a conversion gain up to -2.9 dB, with high suppressions of 21.6 dB, 33.7 dB on the fundamental, and the third harmonics respectively. The total DC consumption of frequency-doubler MMIC is about 19.6 mW.
AB - This paper presents the design and simulation of a D-band active integrated frequency-doubler MMIC with a 70-nm InAIAs/lnGaAs/lnP pseudomorphic high electron-mobility transistor (PHEMT) technology. The doubler MMIC is designed through schematic simulation and momentum EM co-simulation by ADS software with a 2×25μrn gate length PHEMT. Without the use of post-amplification, the frequency-doubler generates an output power more than 0 dBm range from 135 to 165 GHz with an input power of 4.5 dBm, that is, a 3-dB bandwidth of 20% has been achieved. The maximum output power of 1.58 dBm at 143 GHz. At the same frequency, the MMIC exhibits a conversion gain up to -2.9 dB, with high suppressions of 21.6 dB, 33.7 dB on the fundamental, and the third harmonics respectively. The total DC consumption of frequency-doubler MMIC is about 19.6 mW.
UR - http://www.scopus.com/inward/record.url?scp=85060218780&partnerID=8YFLogxK
U2 - 10.1109/ICMMT.2018.8563708
DO - 10.1109/ICMMT.2018.8563708
M3 - Conference contribution
AN - SCOPUS:85060218780
T3 - 2018 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018 - Proceedings
BT - 2018 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 10th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018
Y2 - 6 May 2018 through 9 May 2018
ER -