Cu-plated through-wafer vias for AlGaN/GaN high electron mobility transistors on Si

K. H. Chen; F. Ren; A. Pais; Huikai Xie; B. P. Gila; S. J. Pearton; J. W. Johnson; P. Rajagopal; J. C. Roberts; E. L. Piner; K. J. Linthicum

doi:10.1116/1.3212931

Cu-plated through-wafer vias for AlGaN/GaN high electron mobility transistors on Si

K. H. Chen^*, F. Ren, A. Pais, Huikai Xie, B. P. Gila, S. J. Pearton, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicum

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A robust method for creating Cu-plated through-wafer vias for AlGaN/GaN high electron mobility transistors on Si is reported. The initial 70 μm deep vias with diameters of 50 μm are created by deep Si reactive ion etching, followed by pulsed Cu electroplating and mechanical polishing to planarize the metal. This is an attractive approach for increasing the effective thermal conductivity of the composite substrate for very high power device applications.

Original language	English
Pages (from-to)	2166-2169
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	27
Issue number	5
DOIs	https://doi.org/10.1116/1.3212931
Publication status	Published - 2009
Externally published	Yes

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Chen, K. H., Ren, F., Pais, A., Xie, H., Gila, B. P., Pearton, S. J., Johnson, J. W., Rajagopal, P., Roberts, J. C., Piner, E. L., & Linthicum, K. J. (2009). Cu-plated through-wafer vias for AlGaN/GaN high electron mobility transistors on Si. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27(5), 2166-2169. https://doi.org/10.1116/1.3212931

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title = "Cu-plated through-wafer vias for AlGaN/GaN high electron mobility transistors on Si",

abstract = "A robust method for creating Cu-plated through-wafer vias for AlGaN/GaN high electron mobility transistors on Si is reported. The initial 70 μm deep vias with diameters of 50 μm are created by deep Si reactive ion etching, followed by pulsed Cu electroplating and mechanical polishing to planarize the metal. This is an attractive approach for increasing the effective thermal conductivity of the composite substrate for very high power device applications.",

author = "Chen, {K. H.} and F. Ren and A. Pais and Huikai Xie and Gila, {B. P.} and Pearton, {S. J.} and Johnson, {J. W.} and P. Rajagopal and Roberts, {J. C.} and Piner, {E. L.} and Linthicum, {K. J.}",

year = "2009",

doi = "10.1116/1.3212931",

language = "English",

volume = "27",

pages = "2166--2169",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

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TY - JOUR

T1 - Cu-plated through-wafer vias for AlGaN/GaN high electron mobility transistors on Si

AU - Chen, K. H.

AU - Ren, F.

AU - Pais, A.

AU - Xie, Huikai

AU - Gila, B. P.

AU - Pearton, S. J.

AU - Johnson, J. W.

AU - Rajagopal, P.

AU - Roberts, J. C.

AU - Piner, E. L.

AU - Linthicum, K. J.

PY - 2009

Y1 - 2009

N2 - A robust method for creating Cu-plated through-wafer vias for AlGaN/GaN high electron mobility transistors on Si is reported. The initial 70 μm deep vias with diameters of 50 μm are created by deep Si reactive ion etching, followed by pulsed Cu electroplating and mechanical polishing to planarize the metal. This is an attractive approach for increasing the effective thermal conductivity of the composite substrate for very high power device applications.

AB - A robust method for creating Cu-plated through-wafer vias for AlGaN/GaN high electron mobility transistors on Si is reported. The initial 70 μm deep vias with diameters of 50 μm are created by deep Si reactive ion etching, followed by pulsed Cu electroplating and mechanical polishing to planarize the metal. This is an attractive approach for increasing the effective thermal conductivity of the composite substrate for very high power device applications.

UR - http://www.scopus.com/inward/record.url?scp=70349667463&partnerID=8YFLogxK

U2 - 10.1116/1.3212931

DO - 10.1116/1.3212931

M3 - Article

AN - SCOPUS:70349667463

SN - 1071-1023

VL - 27

SP - 2166

EP - 2169

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 5

ER -

Cu-plated through-wafer vias for AlGaN/GaN high electron mobility transistors on Si

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