Controllable growth of two-dimensional NbSe2 flakes with irregular geometries under ion etching

Peiyao Xiao, Xu Zhang, Xianglin Peng, Lu Qiao, Ji Li, Chang Wang, Shuyu Liu, Yuxiang Liu, Zhitao Wu, Wende Xiao*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Nanostructured NbSe2 has gained enormous interest in recent decades owning to its exotic properties and potential applications. Although two-dimensional (2D) NbSe2 structures have been successfully synthesized on various substrates, it remains a great challenge to prepare NbSe2 nanostructures with high edge-to-surface ratio, which is highly desirable for potential applications in catalysis. Here, we demonstrate that 2D NbSe2 with irregular geometries can be controllably grown on highly oriented pyrolytic graphite substrates via tuning the subtle balance between growth and ion etching. Atomic force microscopy, transmission electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy were employed to characterize the morphology and composition of the as-grown NbSe2 flakes. Our work highlights the important role of ion etching and paves the way for the growth of 2D materials with various geometries.

Original languageEnglish
Article number112154
JournalVacuum
Volume213
DOIs
Publication statusPublished - Jul 2023

Keywords

  • Ion etching
  • Molecular beam epitaxy
  • Thin film

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Xiao, P., Zhang, X., Peng, X., Qiao, L., Li, J., Wang, C., Liu, S., Liu, Y., Wu, Z., & Xiao, W. (2023). Controllable growth of two-dimensional NbSe2 flakes with irregular geometries under ion etching. Vacuum, 213, Article 112154. https://doi.org/10.1016/j.vacuum.2023.112154