Control of the local magnetic states in graphene with voltage and gating

Fei Gao, Yu Zhang, Lin He, Shiwu Gao, Mads Brandbyge

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Magnetism of graphene can be created by atomic defects, either hydrogen adsorption or single-carbon vacancy formation, owing to the unpaired π electrons around the defects. Here we explore, based on rigorous first principles calculations, the possibility of voltage manipulation of two such types of π magnetism in graphene via a scanning tunneling microscope tip. We find a remarkably different behavior. For the hydrogen, the magnetic moment can be switched on and off with voltage-induced doping, whereas, for the carbon vacancy, the spin splitting of the π bands persists, almost independent of the extent of doping, due to the coupling between the π and the σ bonds. Furthermore, the local atomic structures near the vacancy can be reversibly manipulated by a coordination mechanism between an intermediate tip-defect distance and a moderate tip voltage, consequently leading to the reversal of spin polarization of the π bands. Voltage control of the local magnetic states may open a new avenue for potential applications in spintronics.

Original languageEnglish
Article numberL241402
JournalPhysical Review B
Volume103
Issue number24
DOIs
Publication statusPublished - 15 Jun 2021
Externally publishedYes

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