CMOS z-axis capacitive accelerometer with comb-finger sensing

Huikai Xie; Gary K. Fedder

CMOS z-axis capacitive accelerometer with comb-finger sensing

Huikai Xie^*, Gary K. Fedder

^*Corresponding author for this work

Carnegie Mellon University

Research output: Contribution to conference › Paper › peer-review

67 Citations (Scopus)

Abstract

This paper reports the first design and experimental results of a z-axis accelerometer that utilizes sidewall capacitance change of multi-conductor comb fingers. The accelerometer has a fully differential capacitive bridge interface and its fabrication is compatible with standard CMOS processes. The frequency response of the accelerometer is characterized both electrically and optically and about 9.3 kHz resonant frequency is measured, which matches MEMCAD simulation within 15%. Measured sensitivity is 0.5 mV/g with less than -40 dB cross-axis sensitivity, noise floor 6 mg/rtHz, and linear range from -27 g to 27 g.

Original language	English
Pages	496-501
Number of pages	6
Publication status	Published - 2000
Externally published	Yes
Event	13th Annual International Conference on Micro Electro Mechanical Systems (MEMS 2000) - Miyazaki, Jpn Duration: 23 Jan 2000 → 27 Jan 2000

Conference

Conference	13th Annual International Conference on Micro Electro Mechanical Systems (MEMS 2000)
City	Miyazaki, Jpn
Period	23/01/00 → 27/01/00

Cite this

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title = "CMOS z-axis capacitive accelerometer with comb-finger sensing",

abstract = "This paper reports the first design and experimental results of a z-axis accelerometer that utilizes sidewall capacitance change of multi-conductor comb fingers. The accelerometer has a fully differential capacitive bridge interface and its fabrication is compatible with standard CMOS processes. The frequency response of the accelerometer is characterized both electrically and optically and about 9.3 kHz resonant frequency is measured, which matches MEMCAD simulation within 15%. Measured sensitivity is 0.5 mV/g with less than -40 dB cross-axis sensitivity, noise floor 6 mg/rtHz, and linear range from -27 g to 27 g.",

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AU - Xie, Huikai

AU - Fedder, Gary K.

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N2 - This paper reports the first design and experimental results of a z-axis accelerometer that utilizes sidewall capacitance change of multi-conductor comb fingers. The accelerometer has a fully differential capacitive bridge interface and its fabrication is compatible with standard CMOS processes. The frequency response of the accelerometer is characterized both electrically and optically and about 9.3 kHz resonant frequency is measured, which matches MEMCAD simulation within 15%. Measured sensitivity is 0.5 mV/g with less than -40 dB cross-axis sensitivity, noise floor 6 mg/rtHz, and linear range from -27 g to 27 g.

AB - This paper reports the first design and experimental results of a z-axis accelerometer that utilizes sidewall capacitance change of multi-conductor comb fingers. The accelerometer has a fully differential capacitive bridge interface and its fabrication is compatible with standard CMOS processes. The frequency response of the accelerometer is characterized both electrically and optically and about 9.3 kHz resonant frequency is measured, which matches MEMCAD simulation within 15%. Measured sensitivity is 0.5 mV/g with less than -40 dB cross-axis sensitivity, noise floor 6 mg/rtHz, and linear range from -27 g to 27 g.

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M3 - Paper

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T2 - 13th Annual International Conference on Micro Electro Mechanical Systems (MEMS 2000)

Y2 - 23 January 2000 through 27 January 2000

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CMOS z-axis capacitive accelerometer with comb-finger sensing

Abstract

Conference

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