Charge density wave states in phase-engineered monolayer VTe2

Zhi Li Zhu; Zhong Liu Liu; Xu Wu; Xuan Yi Li; Jin An Shi; Chen Liu; Guo Jian Qian; Qi Zheng; Li Huang; Xiao Lin; Jia Ou Wang; Hui Chen; Wu Zhou; Jia Tao Sun; Ye Liang Wang; Hong Jun Gao

doi:10.1088/1674-1056/ac6739

Charge density wave states in phase-engineered monolayer VTe₂

Zhi Li Zhu, Zhong Liu Liu, Xu Wu, Xuan Yi Li, Jin An Shi, Chen Liu, Guo Jian Qian, Qi Zheng, Li Huang, Xiao Lin, Jia Ou Wang, Hui Chen, Wu Zhou, Jia Tao Sun, Ye Liang Wang^*, Hong Jun Gao^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Charge density wave (CDW) strongly affects the electronic properties of two-dimensional (2D) materials and can be tuned by phase engineering. Among 2D transitional metal dichalcogenides (TMDs), VTe2 was predicted to require small energy for its phase transition and shows unexpected CDW states in its T-phase. However, the CDW state of H-VTe2 has been barely reported. Here, we investigate the CDW states in monolayer (ML) H-VTe2, induced by phase-engineering from T-phase VTe2. The phase transition between T- and H-VTe2 is revealed with x-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy (STEM) measurements. For H-VTe2, scanning tunneling microscope (STM) and low-energy electron diffraction (LEED) results show a robust 23×23 CDW superlattice with a transition temperature above 450 K. Our findings provide a promising way for manipulating the CDWs in 2D materials and show great potential in its application of nanoelectronics.

Original language	English
Article number	077101
Journal	Chinese Physics B
Volume	31
Issue number	7
DOIs	https://doi.org/10.1088/1674-1056/ac6739
Publication status	Published - 1 Jul 2022

Keywords

64.60.-i
68.65.-k
71.45.Lr
H-VTe
charge density wave
phase engineering
transitional metal dichalcogenides

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10.1088/1674-1056/ac6739

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title = "Charge density wave states in phase-engineered monolayer VTe2",

abstract = "Charge density wave (CDW) strongly affects the electronic properties of two-dimensional (2D) materials and can be tuned by phase engineering. Among 2D transitional metal dichalcogenides (TMDs), VTe2 was predicted to require small energy for its phase transition and shows unexpected CDW states in its T-phase. However, the CDW state of H-VTe2 has been barely reported. Here, we investigate the CDW states in monolayer (ML) H-VTe2, induced by phase-engineering from T-phase VTe2. The phase transition between T- and H-VTe2 is revealed with x-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy (STEM) measurements. For H-VTe2, scanning tunneling microscope (STM) and low-energy electron diffraction (LEED) results show a robust 23×23 CDW superlattice with a transition temperature above 450 K. Our findings provide a promising way for manipulating the CDWs in 2D materials and show great potential in its application of nanoelectronics.",

keywords = "64.60.-i, 68.65.-k, 71.45.Lr, H-VTe, charge density wave, phase engineering, transitional metal dichalcogenides",

author = "Zhu, {Zhi Li} and Liu, {Zhong Liu} and Xu Wu and Li, {Xuan Yi} and Shi, {Jin An} and Chen Liu and Qian, {Guo Jian} and Qi Zheng and Li Huang and Xiao Lin and Wang, {Jia Ou} and Hui Chen and Wu Zhou and Sun, {Jia Tao} and Wang, {Ye Liang} and Gao, {Hong Jun}",

note = "Publisher Copyright: {\textcopyright} 2022 Chinese Physical Society and IOP Publishing Ltd.",

year = "2022",

month = jul,

day = "1",

doi = "10.1088/1674-1056/ac6739",

language = "English",

volume = "31",

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TY - JOUR

T1 - Charge density wave states in phase-engineered monolayer VTe2

AU - Zhu, Zhi Li

AU - Liu, Zhong Liu

AU - Wu, Xu

AU - Li, Xuan Yi

AU - Shi, Jin An

AU - Liu, Chen

AU - Qian, Guo Jian

AU - Zheng, Qi

AU - Huang, Li

AU - Lin, Xiao

AU - Wang, Jia Ou

AU - Chen, Hui

AU - Zhou, Wu

AU - Sun, Jia Tao

AU - Wang, Ye Liang

AU - Gao, Hong Jun

PY - 2022/7/1

Y1 - 2022/7/1

N2 - Charge density wave (CDW) strongly affects the electronic properties of two-dimensional (2D) materials and can be tuned by phase engineering. Among 2D transitional metal dichalcogenides (TMDs), VTe2 was predicted to require small energy for its phase transition and shows unexpected CDW states in its T-phase. However, the CDW state of H-VTe2 has been barely reported. Here, we investigate the CDW states in monolayer (ML) H-VTe2, induced by phase-engineering from T-phase VTe2. The phase transition between T- and H-VTe2 is revealed with x-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy (STEM) measurements. For H-VTe2, scanning tunneling microscope (STM) and low-energy electron diffraction (LEED) results show a robust 23×23 CDW superlattice with a transition temperature above 450 K. Our findings provide a promising way for manipulating the CDWs in 2D materials and show great potential in its application of nanoelectronics.

AB - Charge density wave (CDW) strongly affects the electronic properties of two-dimensional (2D) materials and can be tuned by phase engineering. Among 2D transitional metal dichalcogenides (TMDs), VTe2 was predicted to require small energy for its phase transition and shows unexpected CDW states in its T-phase. However, the CDW state of H-VTe2 has been barely reported. Here, we investigate the CDW states in monolayer (ML) H-VTe2, induced by phase-engineering from T-phase VTe2. The phase transition between T- and H-VTe2 is revealed with x-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy (STEM) measurements. For H-VTe2, scanning tunneling microscope (STM) and low-energy electron diffraction (LEED) results show a robust 23×23 CDW superlattice with a transition temperature above 450 K. Our findings provide a promising way for manipulating the CDWs in 2D materials and show great potential in its application of nanoelectronics.

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KW - phase engineering

KW - transitional metal dichalcogenides

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VL - 31

JO - Chinese Physics B

JF - Chinese Physics B

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ER -

Charge density wave states in phase-engineered monolayer VTe₂

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