Carbon materials with quasi-graphene layers: The dielectric, percolation properties and the electronic transport mechanism

Ming Ming Lu, Jie Yuan*, Bo Wen, Jia Liu, Wen Qiang Cao, Mao Sheng Cao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

We investigate the dielectric properties of multi-walled carbon nanotubes (MWCNTs) and graphite filling in SiO2 with the filling concentration of 2-20 wt.% in the frequency range of 102-107 Hz. MWCNTs and graphite have general electrical properties and percolation phenomena owing to their quasi-structure made up of graphene layers. Both permittivity and conductivity σ exhibit jumps around the percolation threshold. Variations of dielectric properties of the composites are in agreement with the percolation theory. All the percolation phenomena are determined by hopping and migrating electrons, which are attributed to the special electronic transport mechanism of the fillers in the composites. However, the twin-percolation phenomenon exists when the concentration of MWCNTs is between 5-10 wt.% and 15-20 wt.% in the MWCNTs/SiO2 composites, while in the graphite/SiO2 composites, there is only one percolation phenomenon in the graphite concentration of 10-15 wt.%. The unique twin-percolation phenomenon of MWCNTs/SiO2 is described and attributed to the electronic transfer mechanism, especially the network effect of MWCNTs in the composites. The network formation plays an essential role in determining the second percolation threshold of MWCNTs/SiO2.

Original languageEnglish
Article number037701
JournalChinese Physics B
Volume22
Issue number3
DOIs
Publication statusPublished - Mar 2013

Keywords

  • dielectric properties
  • multi-walled carbon nanotube
  • percolation
  • quasi-graphene layer

Fingerprint

Dive into the research topics of 'Carbon materials with quasi-graphene layers: The dielectric, percolation properties and the electronic transport mechanism'. Together they form a unique fingerprint.

Cite this