C-Band High Efficiency GaN HEMT Power Amplifier with Harmonic Tuning

Jiaqing Sun, Weibin Zheng, Feng Qian

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, the design and measurements of a 5-6GHz high-efficiency MMIC high power amplifier implemented in a \mathbf{0.25}\mu\mathbf{m} GaN HEMT process was described. The MMIC has been designed using 2-stage topology. At 5-6GHz, the MMIC showed a power-added efficiency (PAE) of 44%-52% with an associated gain over 20dBm and an output power of 35dBm. The MMIC achieved above 50% PAE at 5.3-5.6GHz. The key to this design is determining and matching the optimum source and load impedance for PAE at the first three harmonics in output stage in order to improve the PAE.

Original languageEnglish
Title of host publication2018 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538624166
DOIs
Publication statusPublished - 5 Dec 2018
Externally publishedYes
Event10th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018 - Chengdu, China
Duration: 6 May 20189 May 2018

Publication series

Name2018 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018 - Proceedings

Conference

Conference10th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018
Country/TerritoryChina
CityChengdu
Period6/05/189/05/18

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