Abstract
The input second harmonic termination and output harmonic termination have been proved to be effective for device efficiency by using source/load pull measurement. Two 4.0~5.6 GHz high efficiency power amplifiers was developed utilizing a 0.25 μm gallium nitride HEMT technology. The two MMICs was designed using 2-stage topology. Fundamental termination is only taken into account in the output stage of the first MMIC. The second and third harmonic matching is used in the output stage of the second MMIC to improve the efficiency. And the second termination at the gate of the middle stage is used in both MMICs to improve the efficiency. Loss matching is used in both input and middle stage to improve stability. At 4.0~5.6 GHz, the MMICs show a output power of 41 dBm with an associated gain of 20~21 dB and a power added efficiency over 48% and 45% respectively at drain voltage of 28 V and input pulse width of 100 with a duty cycle of 10%. The chip size is 3.9 mm×3.3 mm.
| Translated title of the contribution | C-band High-efficiency GaN HEMT Power Amplifier |
|---|---|
| Original language | Chinese (Traditional) |
| Pages (from-to) | 379-383 |
| Number of pages | 5 |
| Journal | Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics |
| Volume | 37 |
| Issue number | 6 |
| Publication status | Published - 25 Dec 2017 |
| Externally published | Yes |