Built-in-self-test 3-D ring oscillator for stacked 3DIC

Cheng Jin*, Ni Wang, Xiaowen Xu, Houjun Sun

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A 3-D ring oscillator integrated with through silicon vias (TSVs) is designed and fabricated for testing multilayer stacked integrated circuits with TSV. The proposed 3-D ring oscillator consists of 13 stages. 65-nm CMOS dies with two current-starved inverter and via-last TSVs are designed for the five middle layers of 3-D ring oscillator. The two cascaded inverters are connected to the up-side layer through a TSV and to the down-side layer through a micro-bump. One chip with two inverters but without TSV is stacked in the top layer of the 3-D ring oscillator to realize the ring oscillator loop, and one logic chip with one inverter and via-middle TSVs are in the bottom of the ring oscillator. The characteristics of via-last and via-middle TSVs in the 3-D ring oscillator are analyzed based on the equivalent circuits. The oscillate frequency responses of the designed 3-D ring oscillator are measured finally to verify the design concept, and to assess the performance of the 3-D ring oscillator. The measured results demonstrate that the proposed 3-D ring oscillator is an attractive candidate for testing the stacked 3-D integrated circuit, and the effect of TSVs dominants the delay of the 3-D ring oscillator.

Original languageEnglish
Title of host publicationRFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology
Subtitle of host publicationSilicon Technology Heats Up for THz
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479955039
DOIs
Publication statusPublished - 21 Oct 2014
Event2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014 - Hefei, China
Duration: 27 Aug 201430 Aug 2014

Publication series

NameRFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz

Conference

Conference2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014
Country/TerritoryChina
CityHefei
Period27/08/1430/08/14

Keywords

  • 3-D integrated circuit
  • 3-D ring oscillator
  • through silicon via (TSV)
  • via-last TSV
  • via-middle TSV

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