Chen, P., Cheng, C., Shen, C., Zhang, J., Wu, S., Lu, X., Wang, S., Du, L., Watanabe, K., Taniguchi, T., Sun, J., Yang, R., Shi, D., Liu, K., Meng, S., & Zhang, G. (2019). Band evolution of two-dimensional transition metal dichalcogenides under electric fields. Applied Physics Letters, 115(8), Article 083104. https://doi.org/10.1063/1.5093055
Chen, Peng ; Cheng, Cai ; Shen, Cheng et al. / Band evolution of two-dimensional transition metal dichalcogenides under electric fields. In: Applied Physics Letters. 2019 ; Vol. 115, No. 8.
@article{80e72446b0e846ac8727b14cc719f2d2,
title = "Band evolution of two-dimensional transition metal dichalcogenides under electric fields",
abstract = "Band engineering of two-dimensional transition metal dichalcogenides (2D TMDCs) is of great significance with regard to both fundamental exploration and practical application. Here we report on a study of the band evolution of monolayer and bilayer TMDCs (WS2, WSe2, and MoS2) under vertical electric fields. Our results show that the electric field has a negligible influence on the bandgaps of monolayer TMDCs. For bilayer TMDCs, our results show that their intralayer direct bandgaps are also immune to the electric field. However, the indirect bandgaps of bilayer TMDCs can be effectively tuned by a vertical electric field. Interestingly, we find that the field tunability of the bandgap in bilayer WSe2 is much larger than those in bilayer WS2 and MoS2.",
author = "Peng Chen and Cai Cheng and Cheng Shen and Jing Zhang and Shuang Wu and Xiaobo Lu and Shuopei Wang and Luojun Du and Kenji Watanabe and Takashi Taniguchi and Jiatao Sun and Rong Yang and Dongxia Shi and Kaihui Liu and Sheng Meng and Guangyu Zhang",
note = "Publisher Copyright: {\textcopyright} 2019 Author(s).",
year = "2019",
month = aug,
day = "19",
doi = "10.1063/1.5093055",
language = "English",
volume = "115",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "8",
}
Chen, P, Cheng, C, Shen, C, Zhang, J, Wu, S, Lu, X, Wang, S, Du, L, Watanabe, K, Taniguchi, T, Sun, J, Yang, R, Shi, D, Liu, K, Meng, S & Zhang, G 2019, 'Band evolution of two-dimensional transition metal dichalcogenides under electric fields', Applied Physics Letters, vol. 115, no. 8, 083104. https://doi.org/10.1063/1.5093055
Band evolution of two-dimensional transition metal dichalcogenides under electric fields. / Chen, Peng; Cheng, Cai; Shen, Cheng et al.
In:
Applied Physics Letters, Vol. 115, No. 8, 083104, 19.08.2019.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Band evolution of two-dimensional transition metal dichalcogenides under electric fields
AU - Chen, Peng
AU - Cheng, Cai
AU - Shen, Cheng
AU - Zhang, Jing
AU - Wu, Shuang
AU - Lu, Xiaobo
AU - Wang, Shuopei
AU - Du, Luojun
AU - Watanabe, Kenji
AU - Taniguchi, Takashi
AU - Sun, Jiatao
AU - Yang, Rong
AU - Shi, Dongxia
AU - Liu, Kaihui
AU - Meng, Sheng
AU - Zhang, Guangyu
N1 - Publisher Copyright:
© 2019 Author(s).
PY - 2019/8/19
Y1 - 2019/8/19
N2 - Band engineering of two-dimensional transition metal dichalcogenides (2D TMDCs) is of great significance with regard to both fundamental exploration and practical application. Here we report on a study of the band evolution of monolayer and bilayer TMDCs (WS2, WSe2, and MoS2) under vertical electric fields. Our results show that the electric field has a negligible influence on the bandgaps of monolayer TMDCs. For bilayer TMDCs, our results show that their intralayer direct bandgaps are also immune to the electric field. However, the indirect bandgaps of bilayer TMDCs can be effectively tuned by a vertical electric field. Interestingly, we find that the field tunability of the bandgap in bilayer WSe2 is much larger than those in bilayer WS2 and MoS2.
AB - Band engineering of two-dimensional transition metal dichalcogenides (2D TMDCs) is of great significance with regard to both fundamental exploration and practical application. Here we report on a study of the band evolution of monolayer and bilayer TMDCs (WS2, WSe2, and MoS2) under vertical electric fields. Our results show that the electric field has a negligible influence on the bandgaps of monolayer TMDCs. For bilayer TMDCs, our results show that their intralayer direct bandgaps are also immune to the electric field. However, the indirect bandgaps of bilayer TMDCs can be effectively tuned by a vertical electric field. Interestingly, we find that the field tunability of the bandgap in bilayer WSe2 is much larger than those in bilayer WS2 and MoS2.
UR - http://www.scopus.com/inward/record.url?scp=85071249530&partnerID=8YFLogxK
U2 - 10.1063/1.5093055
DO - 10.1063/1.5093055
M3 - Article
AN - SCOPUS:85071249530
SN - 0003-6951
VL - 115
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 8
M1 - 083104
ER -
Chen P, Cheng C, Shen C, Zhang J, Wu S, Lu X et al. Band evolution of two-dimensional transition metal dichalcogenides under electric fields. Applied Physics Letters. 2019 Aug 19;115(8):083104. doi: 10.1063/1.5093055
