Atomistic simulations of structural relaxation process in amorphous silicon carbide

K. Xue; L. S. Niu; H. J. Shi; M. Naït Abdilaziz

Atomistic simulations of structural relaxation process in amorphous silicon carbide

K. Xue^*, L. S. Niu, H. J. Shi, M. Naït Abdilaziz

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In order to elucidate the structural relaxation of a-SiC, we performed molecular dynamics simulation of the annealing process in a-SiC with different quench rates. The microstructures before and after annealing were examined and compared, in terms of both chemical and topological order. Our results revealed that chemical order was distinctively improved, along with some considerable modification occurred in the topological order, within both short range and medium range. A strong correlation between chemical and topological order was clarified.

Original language	English
Title of host publication	Advances in Heterogeneous Material Mechanics 2008 - 2nd International Conference on Heterogeneous Material Mechanics, ICHMM 2008
Pages	1498-1501
Number of pages	4
Publication status	Published - 2008
Externally published	Yes
Event	Advances in Heterogeneous Material Mechanics 2008 - 2nd International Conference on Heterogeneous Material Mechanics, ICHMM 2008 - Huangshan, China Duration: 3 Jun 2008 → 8 Jun 2008

Publication series

Name	Advances in Heterogeneous Material Mechanics 2008 - Proceedings of the 2nd International Conference on Heterogeneous Material Mechanics, ICHMM 2008

Conference

Conference	Advances in Heterogeneous Material Mechanics 2008 - 2nd International Conference on Heterogeneous Material Mechanics, ICHMM 2008
Country/Territory	China
City	Huangshan
Period	3/06/08 → 8/06/08

Keywords

Amorphous
Annealing rates
Silicon Carbide
Structural relaxation

Cite this

Xue, K., Niu, L. S., Shi, H. J., & Abdilaziz, M. N. (2008). Atomistic simulations of structural relaxation process in amorphous silicon carbide. In Advances in Heterogeneous Material Mechanics 2008 - 2nd International Conference on Heterogeneous Material Mechanics, ICHMM 2008 (pp. 1498-1501). (Advances in Heterogeneous Material Mechanics 2008 - Proceedings of the 2nd International Conference on Heterogeneous Material Mechanics, ICHMM 2008).

Xue, K. ; Niu, L. S. ; Shi, H. J. et al. / Atomistic simulations of structural relaxation process in amorphous silicon carbide. Advances in Heterogeneous Material Mechanics 2008 - 2nd International Conference on Heterogeneous Material Mechanics, ICHMM 2008. 2008. pp. 1498-1501 (Advances in Heterogeneous Material Mechanics 2008 - Proceedings of the 2nd International Conference on Heterogeneous Material Mechanics, ICHMM 2008).

@inproceedings{07b10026966245bfbdb8b49f0f084b5c,

title = "Atomistic simulations of structural relaxation process in amorphous silicon carbide",

abstract = "In order to elucidate the structural relaxation of a-SiC, we performed molecular dynamics simulation of the annealing process in a-SiC with different quench rates. The microstructures before and after annealing were examined and compared, in terms of both chemical and topological order. Our results revealed that chemical order was distinctively improved, along with some considerable modification occurred in the topological order, within both short range and medium range. A strong correlation between chemical and topological order was clarified.",

keywords = "Amorphous, Annealing rates, Silicon Carbide, Structural relaxation",

author = "K. Xue and Niu, {L. S.} and Shi, {H. J.} and Abdilaziz, {M. Na{\"i}t}",

year = "2008",

language = "English",

isbn = "9781932078800",

series = "Advances in Heterogeneous Material Mechanics 2008 - Proceedings of the 2nd International Conference on Heterogeneous Material Mechanics, ICHMM 2008",

pages = "1498--1501",

booktitle = "Advances in Heterogeneous Material Mechanics 2008 - 2nd International Conference on Heterogeneous Material Mechanics, ICHMM 2008",

note = "Advances in Heterogeneous Material Mechanics 2008 - 2nd International Conference on Heterogeneous Material Mechanics, ICHMM 2008 ; Conference date: 03-06-2008 Through 08-06-2008",

}

Xue, K, Niu, LS, Shi, HJ & Abdilaziz, MN 2008, Atomistic simulations of structural relaxation process in amorphous silicon carbide. in Advances in Heterogeneous Material Mechanics 2008 - 2nd International Conference on Heterogeneous Material Mechanics, ICHMM 2008. Advances in Heterogeneous Material Mechanics 2008 - Proceedings of the 2nd International Conference on Heterogeneous Material Mechanics, ICHMM 2008, pp. 1498-1501, Advances in Heterogeneous Material Mechanics 2008 - 2nd International Conference on Heterogeneous Material Mechanics, ICHMM 2008, Huangshan, China, 3/06/08.

Atomistic simulations of structural relaxation process in amorphous silicon carbide. / Xue, K.; Niu, L. S.; Shi, H. J. et al.
Advances in Heterogeneous Material Mechanics 2008 - 2nd International Conference on Heterogeneous Material Mechanics, ICHMM 2008. 2008. p. 1498-1501 (Advances in Heterogeneous Material Mechanics 2008 - Proceedings of the 2nd International Conference on Heterogeneous Material Mechanics, ICHMM 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Atomistic simulations of structural relaxation process in amorphous silicon carbide

AU - Xue, K.

AU - Niu, L. S.

AU - Shi, H. J.

AU - Abdilaziz, M. Naït

PY - 2008

Y1 - 2008

N2 - In order to elucidate the structural relaxation of a-SiC, we performed molecular dynamics simulation of the annealing process in a-SiC with different quench rates. The microstructures before and after annealing were examined and compared, in terms of both chemical and topological order. Our results revealed that chemical order was distinctively improved, along with some considerable modification occurred in the topological order, within both short range and medium range. A strong correlation between chemical and topological order was clarified.

AB - In order to elucidate the structural relaxation of a-SiC, we performed molecular dynamics simulation of the annealing process in a-SiC with different quench rates. The microstructures before and after annealing were examined and compared, in terms of both chemical and topological order. Our results revealed that chemical order was distinctively improved, along with some considerable modification occurred in the topological order, within both short range and medium range. A strong correlation between chemical and topological order was clarified.

KW - Amorphous

KW - Annealing rates

KW - Silicon Carbide

KW - Structural relaxation

UR - http://www.scopus.com/inward/record.url?scp=56649115842&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:56649115842

SN - 9781932078800

T3 - Advances in Heterogeneous Material Mechanics 2008 - Proceedings of the 2nd International Conference on Heterogeneous Material Mechanics, ICHMM 2008

SP - 1498

EP - 1501

BT - Advances in Heterogeneous Material Mechanics 2008 - 2nd International Conference on Heterogeneous Material Mechanics, ICHMM 2008

T2 - Advances in Heterogeneous Material Mechanics 2008 - 2nd International Conference on Heterogeneous Material Mechanics, ICHMM 2008

Y2 - 3 June 2008 through 8 June 2008

ER -

Xue K, Niu LS, Shi HJ, Abdilaziz MN. Atomistic simulations of structural relaxation process in amorphous silicon carbide. In Advances in Heterogeneous Material Mechanics 2008 - 2nd International Conference on Heterogeneous Material Mechanics, ICHMM 2008. 2008. p. 1498-1501. (Advances in Heterogeneous Material Mechanics 2008 - Proceedings of the 2nd International Conference on Heterogeneous Material Mechanics, ICHMM 2008).

Atomistic simulations of structural relaxation process in amorphous silicon carbide

Abstract

Publication series

Conference

Keywords

Other files and links

Fingerprint

Cite this