Wu, L., Wang, A., Shi, J., Yan, J., Zhou, Z., Bian, C., Ma, J., Ma, R., Liu, H., Chen, J., Huang, Y., Zhou, W., Bao, L., Ouyang, M., Pennycook, S. J., Pantelides, S. T., & Gao, H. J. (2021). Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices. Nature Nanotechnology, 16(8), 882-887. https://doi.org/10.1038/s41565-021-00904-5
Wu, Liangmei ; Wang, Aiwei ; Shi, Jinan et al. / Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices. In: Nature Nanotechnology. 2021 ; Vol. 16, No. 8. pp. 882-887.
@article{3bdddd777efe4b638af85e591b8437e3,
title = "Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices",
abstract = "The development of high-performance memory devices has played a key role in the innovation of modern electronics. Non-volatile memory devices have manifested high capacity and mechanical reliability as a mainstream technology; however, their performance has been hampered by low extinction ratio and slow operational speed. Despite substantial efforts to improve these characteristics, typical write times of hundreds of micro- or milliseconds remain a few orders of magnitude longer than that of their volatile counterparts. Here we demonstrate non-volatile, floating-gate memory devices based on van der Waals heterostructures with atomically sharp interfaces between different functional elements, achieving ultrahigh-speed programming/erasing operations in the range of nanoseconds with extinction ratio up to 1010. This enhanced performance enables new device capabilities such as multi-bit storage, thus opening up applications in the realm of modern nanoelectronics and offering future fabrication guidelines for device scale up.",
author = "Liangmei Wu and Aiwei Wang and Jinan Shi and Jiahao Yan and Zhang Zhou and Ce Bian and Jiajun Ma and Ruisong Ma and Hongtao Liu and Jiancui Chen and Yuan Huang and Wu Zhou and Lihong Bao and Min Ouyang and Pennycook, {Stephen J.} and Pantelides, {Sokrates T.} and Gao, {Hong Jun}",
note = "Publisher Copyright: {\textcopyright} 2021, The Author(s), under exclusive licence to Springer Nature Limited.",
year = "2021",
month = aug,
doi = "10.1038/s41565-021-00904-5",
language = "English",
volume = "16",
pages = "882--887",
journal = "Nature Nanotechnology",
issn = "1748-3387",
publisher = "Nature Publishing Group",
number = "8",
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Wu, L, Wang, A, Shi, J, Yan, J, Zhou, Z, Bian, C, Ma, J, Ma, R, Liu, H, Chen, J, Huang, Y, Zhou, W, Bao, L, Ouyang, M, Pennycook, SJ, Pantelides, ST & Gao, HJ 2021, 'Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices', Nature Nanotechnology, vol. 16, no. 8, pp. 882-887. https://doi.org/10.1038/s41565-021-00904-5
Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices. / Wu, Liangmei; Wang, Aiwei; Shi, Jinan et al.
In:
Nature Nanotechnology, Vol. 16, No. 8, 08.2021, p. 882-887.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices
AU - Wu, Liangmei
AU - Wang, Aiwei
AU - Shi, Jinan
AU - Yan, Jiahao
AU - Zhou, Zhang
AU - Bian, Ce
AU - Ma, Jiajun
AU - Ma, Ruisong
AU - Liu, Hongtao
AU - Chen, Jiancui
AU - Huang, Yuan
AU - Zhou, Wu
AU - Bao, Lihong
AU - Ouyang, Min
AU - Pennycook, Stephen J.
AU - Pantelides, Sokrates T.
AU - Gao, Hong Jun
N1 - Publisher Copyright:
© 2021, The Author(s), under exclusive licence to Springer Nature Limited.
PY - 2021/8
Y1 - 2021/8
N2 - The development of high-performance memory devices has played a key role in the innovation of modern electronics. Non-volatile memory devices have manifested high capacity and mechanical reliability as a mainstream technology; however, their performance has been hampered by low extinction ratio and slow operational speed. Despite substantial efforts to improve these characteristics, typical write times of hundreds of micro- or milliseconds remain a few orders of magnitude longer than that of their volatile counterparts. Here we demonstrate non-volatile, floating-gate memory devices based on van der Waals heterostructures with atomically sharp interfaces between different functional elements, achieving ultrahigh-speed programming/erasing operations in the range of nanoseconds with extinction ratio up to 1010. This enhanced performance enables new device capabilities such as multi-bit storage, thus opening up applications in the realm of modern nanoelectronics and offering future fabrication guidelines for device scale up.
AB - The development of high-performance memory devices has played a key role in the innovation of modern electronics. Non-volatile memory devices have manifested high capacity and mechanical reliability as a mainstream technology; however, their performance has been hampered by low extinction ratio and slow operational speed. Despite substantial efforts to improve these characteristics, typical write times of hundreds of micro- or milliseconds remain a few orders of magnitude longer than that of their volatile counterparts. Here we demonstrate non-volatile, floating-gate memory devices based on van der Waals heterostructures with atomically sharp interfaces between different functional elements, achieving ultrahigh-speed programming/erasing operations in the range of nanoseconds with extinction ratio up to 1010. This enhanced performance enables new device capabilities such as multi-bit storage, thus opening up applications in the realm of modern nanoelectronics and offering future fabrication guidelines for device scale up.
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U2 - 10.1038/s41565-021-00904-5
DO - 10.1038/s41565-021-00904-5
M3 - Article
C2 - 33941919
AN - SCOPUS:85105245272
SN - 1748-3387
VL - 16
SP - 882
EP - 887
JO - Nature Nanotechnology
JF - Nature Nanotechnology
IS - 8
ER -
Wu L, Wang A, Shi J, Yan J, Zhou Z, Bian C et al. Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices. Nature Nanotechnology. 2021 Aug;16(8):882-887. doi: 10.1038/s41565-021-00904-5
