Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics

Qilin Hua, Guoyun Gao, Chunsheng Jiang, Jinran Yu, Junlu Sun, Taiping Zhang, Bin Gao*, Weijun Cheng, Renrong Liang, He Qian, Weiguo Hu, Qijun Sun*, Zhong Lin Wang*, Huaqiang Wu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

79 Citations (Scopus)

Abstract

Power dissipation is a fundamental issue for future chip-based electronics. As promising channel materials, two-dimensional semiconductors show excellent capabilities of scaling dimensions and reducing off-state currents. However, field-effect transistors based on two-dimensional materials are still confronted with the fundamental thermionic limitation of the subthreshold swing of 60 mV decade−1 at room temperature. Here, we present an atomic threshold-switching field-effect transistor constructed by integrating a metal filamentary threshold switch with a two-dimensional MoS2 channel, and obtain abrupt steepness in the turn-on characteristics and 4.5 mV decade−1 subthreshold swing (over five decades). This is achieved by using the negative differential resistance effect from the threshold switch to induce an internal voltage amplification across the MoS2 channel. Notably, in such devices, the simultaneous achievement of efficient electrostatics, very small sub-thermionic subthreshold swings, and ultralow leakage currents, would be highly desirable for next-generation energy-efficient integrated circuits and ultralow-power applications.

Original languageEnglish
Article number6207
JournalNature Communications
Volume11
Issue number1
DOIs
Publication statusPublished - Dec 2020
Externally publishedYes

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Hua, Q., Gao, G., Jiang, C., Yu, J., Sun, J., Zhang, T., Gao, B., Cheng, W., Liang, R., Qian, H., Hu, W., Sun, Q., Wang, Z. L., & Wu, H. (2020). Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics. Nature Communications, 11(1), Article 6207. https://doi.org/10.1038/s41467-020-20051-0