Approaching the resolution limit of W-C nano-gaps using focused ion beam chemical vapour deposition

Jun Dai*, Hui Chang, Etsuo Maeda, Shin'ichi Warisawa, Reo Kometani

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Nano-gaps are fundamental building blocks for nanochannels, plasmonic nanostructures and superconducting Josephson junctions. We present a systematic study on the formation mechanism and resolution limit of W-C nano-gaps fabricated using focused-ion-beam chemical vapour deposition (FIB-CVD). First, the deposition size of the nanostructures is evaluated. The size averaged over 100 dots is 32 nm at FWHM. Line and space are also fabricated with the smallest size, having a spacing of only 5 nm at FWHM. Then, a model is developed to study the formation mechanism and provides the design basis for W-C nano-gaps. Both experimental and simulation results reveal that the shrinkage of W-C nano-gaps is accelerated as the Gaussian parts of the nano-wire profiles overlap. A Nano-gap with a length of 5 nm and height difference as high as 42 nm is synthesized. We believe that FIB-CVD opens avenues for novel functional nanodevices that can be potentially used for biosensing, photodetecting, or quantum computing.

Original languageEnglish
Pages (from-to)422-427
Number of pages6
JournalApplied Surface Science
Volume427
DOIs
Publication statusPublished - 1 Jan 2018

Keywords

  • Focused ion beam
  • Gaussian-Holtsmarkian distribution
  • Growth model
  • Nano-gap
  • Resolution limit

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Dai, J., Chang, H., Maeda, E., Warisawa, S., & Kometani, R. (2018). Approaching the resolution limit of W-C nano-gaps using focused ion beam chemical vapour deposition. Applied Surface Science, 427, 422-427. https://doi.org/10.1016/j.apsusc.2017.08.079