Anomalous high capacitance in a coaxial single nanowire capacitor

Zheng Liu, Yongjie Zhan, Gang Shi, Simona Moldovan, Mohamed Gharbi, Li Song, Lulu Ma, Wei Gao, Jiaqi Huang, Robert Vajtai, Florian Banhart, Pradeep Sharma, Jun Lou*, Pulickel M. Ajayan

*Corresponding author for this work

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Abstract

Building entire multiple-component devices on single nanowires is a promising strategy for miniaturizing electronic applications. Here we demonstrate a single nanowire capacitor with a coaxial asymmetric Cu-Cu 2 O-C structure, fabricated using a two-step chemical reaction and vapour deposition method. The capacitance measured from a single nanowire device corresponds to ∼140 μFcm2, exceeding previous reported values for metal-insulator-metal micro-capacitors and is more than one order of magnitude higher than what is predicted by classical electrostatics. Quantum mechanical calculations indicate that this unusually high capacitance may be attributed to a negative quantum capacitance of the dielectric-metal interface, enhanced significantly at the nanoscale.

Original languageEnglish
Article number879
JournalNature Communications
Volume3
DOIs
Publication statusPublished - 2012
Externally publishedYes

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Liu, Z., Zhan, Y., Shi, G., Moldovan, S., Gharbi, M., Song, L., Ma, L., Gao, W., Huang, J., Vajtai, R., Banhart, F., Sharma, P., Lou, J., & Ajayan, P. M. (2012). Anomalous high capacitance in a coaxial single nanowire capacitor. Nature Communications, 3, Article 879. https://doi.org/10.1038/ncomms1833