Annealing effects on the electrical and photoelectric performance of SnS                         2                          field-effect transistor

Hong Xu; Jie Xing; Jing hao Lu; Xu Han; Danyang Li; Zhang Zhou; Li hong Bao; Hong jun Gao; Yuan Huang

doi:10.1016/j.apsusc.2019.04.094

Annealing effects on the electrical and photoelectric performance of SnS ₂ field-effect transistor

Hong Xu, Jie Xing^*, Jing hao Lu, Xu Han, Danyang Li, Zhang Zhou, Li hong Bao, Hong jun Gao, Yuan Huang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

SnS ₂ field effect transistor (FET) has been fabricated based on an exfoliated SnS ₂ flake. The effect of vacuum and sulfur-vapor annealing on the electric and optoelectronic properties of SnS ₂ FET have been investigated in detail. The experimental results indicate post-annealing, especially the sulfur-vapor annealing, has a strong impact on the electrical and photoelectric properties of SnS ₂ FET. The decreasing of source-drain current with annealing, the shift of threshold voltage and the exponential function of photocurrent varying with light intensity all exhibit a close relevance with surface states in SnS ₂ . The intriguing characteristics can be well explained by sulfur-vacancies-related trapping mechanism. These results not only advance the current understanding of the generation, trapping and recombination behavior of photoexcited carriers in two-dimensional materials, but also stimulate the potential applications in optoelectronic devices based on SnS ₂ .

Original language	English
Pages (from-to)	39-44
Number of pages	6
Journal	Applied Surface Science
Volume	484
DOIs	https://doi.org/10.1016/j.apsusc.2019.04.094
Publication status	Published - 1 Aug 2019
Externally published	Yes

Keywords

2D material
Field effect transistor
Optoelectronics
SnS
Sulfur vacancy

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Xu, H., Xing, J., Lu, J. H., Han, X., Li, D., Zhou, Z., Bao, L. H., Gao, H. J., & Huang, Y. (2019). Annealing effects on the electrical and photoelectric performance of SnS ₂ field-effect transistor Applied Surface Science, 484, 39-44. https://doi.org/10.1016/j.apsusc.2019.04.094

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title = " Annealing effects on the electrical and photoelectric performance of SnS 2 field-effect transistor ",

abstract = " SnS 2 field effect transistor (FET) has been fabricated based on an exfoliated SnS 2 flake. The effect of vacuum and sulfur-vapor annealing on the electric and optoelectronic properties of SnS 2 FET have been investigated in detail. The experimental results indicate post-annealing, especially the sulfur-vapor annealing, has a strong impact on the electrical and photoelectric properties of SnS 2 FET. The decreasing of source-drain current with annealing, the shift of threshold voltage and the exponential function of photocurrent varying with light intensity all exhibit a close relevance with surface states in SnS 2 . The intriguing characteristics can be well explained by sulfur-vacancies-related trapping mechanism. These results not only advance the current understanding of the generation, trapping and recombination behavior of photoexcited carriers in two-dimensional materials, but also stimulate the potential applications in optoelectronic devices based on SnS 2 .",

keywords = "2D material, Field effect transistor, Optoelectronics, SnS, Sulfur vacancy",

author = "Hong Xu and Jie Xing and Lu, {Jing hao} and Xu Han and Danyang Li and Zhang Zhou and Bao, {Li hong} and Gao, {Hong jun} and Yuan Huang",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

month = aug,

day = "1",

doi = "10.1016/j.apsusc.2019.04.094",

language = "English",

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journal = "Applied Surface Science",

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T1 - Annealing effects on the electrical and photoelectric performance of SnS 2 field-effect transistor

AU - Xu, Hong

AU - Xing, Jie

AU - Lu, Jing hao

AU - Han, Xu

AU - Li, Danyang

AU - Zhou, Zhang

AU - Bao, Li hong

AU - Gao, Hong jun

AU - Huang, Yuan

PY - 2019/8/1

Y1 - 2019/8/1

N2 - SnS 2 field effect transistor (FET) has been fabricated based on an exfoliated SnS 2 flake. The effect of vacuum and sulfur-vapor annealing on the electric and optoelectronic properties of SnS 2 FET have been investigated in detail. The experimental results indicate post-annealing, especially the sulfur-vapor annealing, has a strong impact on the electrical and photoelectric properties of SnS 2 FET. The decreasing of source-drain current with annealing, the shift of threshold voltage and the exponential function of photocurrent varying with light intensity all exhibit a close relevance with surface states in SnS 2 . The intriguing characteristics can be well explained by sulfur-vacancies-related trapping mechanism. These results not only advance the current understanding of the generation, trapping and recombination behavior of photoexcited carriers in two-dimensional materials, but also stimulate the potential applications in optoelectronic devices based on SnS 2 .

AB - SnS 2 field effect transistor (FET) has been fabricated based on an exfoliated SnS 2 flake. The effect of vacuum and sulfur-vapor annealing on the electric and optoelectronic properties of SnS 2 FET have been investigated in detail. The experimental results indicate post-annealing, especially the sulfur-vapor annealing, has a strong impact on the electrical and photoelectric properties of SnS 2 FET. The decreasing of source-drain current with annealing, the shift of threshold voltage and the exponential function of photocurrent varying with light intensity all exhibit a close relevance with surface states in SnS 2 . The intriguing characteristics can be well explained by sulfur-vacancies-related trapping mechanism. These results not only advance the current understanding of the generation, trapping and recombination behavior of photoexcited carriers in two-dimensional materials, but also stimulate the potential applications in optoelectronic devices based on SnS 2 .

KW - 2D material

KW - Field effect transistor

KW - Optoelectronics

KW - SnS

KW - Sulfur vacancy

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DO - 10.1016/j.apsusc.2019.04.094

M3 - Article

AN - SCOPUS:85064071774

SN - 0169-4332

VL - 484

SP - 39

EP - 44

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Annealing effects on the electrical and photoelectric performance of SnS ₂ field-effect transistor

Abstract

Keywords

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