Angular distribution and recoil effect for 1 MeV Au+ ions through a Si3N4 thin foil

Ke Jin, Zihua Zhu*, Sandeep Manandhar, Jia Liu, Chien Hung Chen, Vaithiyalingam Shutthanandan, Suntharampillai Thevuthasan, William J. Weber, Yanwen Zhang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The Stopping and Range of Ions in Matter (SRIM) code has been widely used to predict nuclear stopping power and angular distribution of ion-solid collisions. However, experimental validation of the predictions is insufficient for slow heavy ions in nonmetallic compounds. In this work, time-of-flight secondary ion mass spectrometry (ToF-SIMS) is applied to determine the angular distribution of 1 MeV Au ions after penetrating a Si3N4 foil with a thickness of ∼100 nm. The exiting Au ions are collected by a Si wafer located ∼14 mm behind the Si3N4 foil, and the resulting 2-dimensional distribution of Au ions on the Si wafer is measured by ToF-SIMS. The SRIM-predicted angular distribution of Au ions through the Si 3N4 thin foil is compared with the measured results, indicating that SRIM slightly overestimates the nuclear stopping power by up to 10%. In addition, thickness reduction of the suspended Si3N 4 foils induced by 1 MeV Au ion irradiation is observed with an average loss rate of ∼107 atoms/ion.

Original languageEnglish
Pages (from-to)346-350
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume332
DOIs
Publication statusPublished - 1 Aug 2014
Externally publishedYes

Keywords

  • Angular distribution
  • Heavy ion
  • SIMS
  • Silicon nitride
  • Stopping power

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