TY - JOUR
T1 - An Optical/Ferroelectric Multiplexing Multidimensional Nonvolatile Memory from Ferroelectric Polymer
AU - He, Shan
AU - Guo, Mengfan
AU - Wang, Yue
AU - Liang, Yuhan
AU - Shen, Yang
N1 - Publisher Copyright:
© 2022 Wiley-VCH GmbH.
PY - 2022/6/16
Y1 - 2022/6/16
N2 - Multiplexing physical dimensions to realize multidimensional storage in a single material has been a goal to increase storage density and data security. Multidimensional storage is only achieved in optical storage material (OSM) by far. Poly(vinylidene fluoride) (PVDF), a semicrystalline polymer, is widely studied as a candidate for ferroelectric random access (FeRAM). Herein, the atomic force microscopy (AFM)-based infrared spectroscopy techniqueis used to induce multilevel phase transformations in PVDF ultrathin film on nanometric scales and for writing/readout of IR signals. An optical/ferroelectric multiplexing PVDF memory, where information can be coded with independent four-level optical IR and bilevel ferroelectric signals, is demonstrated. High data security and a storage density up to 180 GBit in.−2 are achieved simultaneously. Owing to the different critical temperature for phase transformation (optical data, <167 °C) and polarization switching (ferroelectric data, <100 °C), the multiplexing memory can function both as optical read-only memory and FeRAM. This work expands material supporting physical dimensions multiplexing beyond OSM for the first time, opening up new opportunities for future high-capacity, multifunctional nano-memory. The strategy proposed here enables on-demand and tunable programming on IR waves, offering prospects for fabrication of active nano-optical devices.
AB - Multiplexing physical dimensions to realize multidimensional storage in a single material has been a goal to increase storage density and data security. Multidimensional storage is only achieved in optical storage material (OSM) by far. Poly(vinylidene fluoride) (PVDF), a semicrystalline polymer, is widely studied as a candidate for ferroelectric random access (FeRAM). Herein, the atomic force microscopy (AFM)-based infrared spectroscopy techniqueis used to induce multilevel phase transformations in PVDF ultrathin film on nanometric scales and for writing/readout of IR signals. An optical/ferroelectric multiplexing PVDF memory, where information can be coded with independent four-level optical IR and bilevel ferroelectric signals, is demonstrated. High data security and a storage density up to 180 GBit in.−2 are achieved simultaneously. Owing to the different critical temperature for phase transformation (optical data, <167 °C) and polarization switching (ferroelectric data, <100 °C), the multiplexing memory can function both as optical read-only memory and FeRAM. This work expands material supporting physical dimensions multiplexing beyond OSM for the first time, opening up new opportunities for future high-capacity, multifunctional nano-memory. The strategy proposed here enables on-demand and tunable programming on IR waves, offering prospects for fabrication of active nano-optical devices.
KW - ferroelectric storage
KW - memory devices
KW - multidimensional storage
KW - phase transitions
KW - poly(vinylidene fluoride)
UR - http://www.scopus.com/inward/record.url?scp=85129850244&partnerID=8YFLogxK
U2 - 10.1002/adma.202202181
DO - 10.1002/adma.202202181
M3 - Article
C2 - 35405769
AN - SCOPUS:85129850244
SN - 0935-9648
VL - 34
JO - Advanced Materials
JF - Advanced Materials
IS - 24
M1 - 2202181
ER -