An 8 mm band low noise amplifier using current reuse technique

Yuan Zheng; Jian Wu; Xuan Ai; Feng Qian; Xinyu Chen; Lei Yang

An 8 mm band low noise amplifier using current reuse technique

Yuan Zheng^*, Jian Wu, Xuan Ai, Feng Qian, Xinyu Chen, Lei Yang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

An 8 mm band low noise amplifier was designed by using current reuse technique and fabricated with 0.15 μm PHEMT process. The chip dimension is 1.73 mm×0.75 mm×0.1 mm. The measured results from 32~38 GHz show a gain more than 21 dB, noise figure less than 1.85 dB, VSWR less than 2.5 and P_1dB more than 7 dBm. The total power consumption with this technique is 5 V and 28 mA, which is about 40% lower than that of the traditional design.

Original language	English
Pages (from-to)	124-129+174
Journal	Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
Volume	33
Issue number	2
Publication status	Published - Apr 2013
Externally published	Yes

Keywords

GaAs
Low noise amplifier
MMIC
PHEMT

Cite this

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title = "An 8 mm band low noise amplifier using current reuse technique",

abstract = "An 8 mm band low noise amplifier was designed by using current reuse technique and fabricated with 0.15 μm PHEMT process. The chip dimension is 1.73 mm×0.75 mm×0.1 mm. The measured results from 32~38 GHz show a gain more than 21 dB, noise figure less than 1.85 dB, VSWR less than 2.5 and P1dB more than 7 dBm. The total power consumption with this technique is 5 V and 28 mA, which is about 40% lower than that of the traditional design.",

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author = "Yuan Zheng and Jian Wu and Xuan Ai and Feng Qian and Xinyu Chen and Lei Yang",

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TY - JOUR

T1 - An 8 mm band low noise amplifier using current reuse technique

AU - Zheng, Yuan

AU - Wu, Jian

AU - Ai, Xuan

AU - Qian, Feng

AU - Chen, Xinyu

AU - Yang, Lei

PY - 2013/4

Y1 - 2013/4

N2 - An 8 mm band low noise amplifier was designed by using current reuse technique and fabricated with 0.15 μm PHEMT process. The chip dimension is 1.73 mm×0.75 mm×0.1 mm. The measured results from 32~38 GHz show a gain more than 21 dB, noise figure less than 1.85 dB, VSWR less than 2.5 and P1dB more than 7 dBm. The total power consumption with this technique is 5 V and 28 mA, which is about 40% lower than that of the traditional design.

AB - An 8 mm band low noise amplifier was designed by using current reuse technique and fabricated with 0.15 μm PHEMT process. The chip dimension is 1.73 mm×0.75 mm×0.1 mm. The measured results from 32~38 GHz show a gain more than 21 dB, noise figure less than 1.85 dB, VSWR less than 2.5 and P1dB more than 7 dBm. The total power consumption with this technique is 5 V and 28 mA, which is about 40% lower than that of the traditional design.

KW - GaAs

KW - Low noise amplifier

KW - MMIC

KW - PHEMT

UR - http://www.scopus.com/inward/record.url?scp=84878045008&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:84878045008

SN - 1000-3819

VL - 33

SP - 124-129+174

JO - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

JF - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

IS - 2

ER -

An 8 mm band low noise amplifier using current reuse technique

Abstract

Keywords

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