Abstract
An 8 mm band low noise amplifier was designed by using current reuse technique and fabricated with 0.15 μm PHEMT process. The chip dimension is 1.73 mm×0.75 mm×0.1 mm. The measured results from 32~38 GHz show a gain more than 21 dB, noise figure less than 1.85 dB, VSWR less than 2.5 and P1dB more than 7 dBm. The total power consumption with this technique is 5 V and 28 mA, which is about 40% lower than that of the traditional design.
Original language | English |
---|---|
Pages (from-to) | 124-129+174 |
Journal | Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics |
Volume | 33 |
Issue number | 2 |
Publication status | Published - Apr 2013 |
Externally published | Yes |
Keywords
- GaAs
- Low noise amplifier
- MMIC
- PHEMT
Fingerprint
Dive into the research topics of 'An 8 mm band low noise amplifier using current reuse technique'. Together they form a unique fingerprint.Cite this
Zheng, Y., Wu, J., Ai, X., Qian, F., Chen, X., & Yang, L. (2013). An 8 mm band low noise amplifier using current reuse technique. Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics, 33(2), 124-129+174.