Aluminum nitride-on-sapphire platform for integrated high-Q microresonators

Xianwen Liu; Changzheng Sun; Bing Xiong; Lai Wang; Jian Wang; Yanjun Han; Zhibiao Hao; Hongtao Li; Yi Luo; Jianchang Yan; Tongbo Wei; Yun Zhang; Junxi Wang

doi:10.1364/OE.25.000587

Aluminum nitride-on-sapphire platform for integrated high-Q microresonators

Xianwen Liu, Changzheng Sun^*, Bing Xiong, Lai Wang, Jian Wang, Yanjun Han, Zhibiao Hao, Hongtao Li, Yi Luo, Jianchang Yan, Tongbo Wei, Yun Zhang, Junxi Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

We demonstrate aluminum nitride (AlN) on sapphire as a novel platform for integrated optics. High-confinement AlN microring resonators are realized by adopting a partially etched (pedestal) waveguide to relax the required etching selectivity for exact pattern transfer. A wide taper is employed at the chip end facets to ensure a low fiber-to-chip coupling loss of ∼2.8 dB/facet for both transverse-electric (TE) and transverse-magnetic (TM) modes. Furthermore, the intrinsic quality factors (Q_int) recorded with a high-resolution linewidth measurement are up to ∼2.5 and 1.9 million at telecom band for fundamental TE₀₀ and TM₀₀ modes, corresponding to a low intracavity propagation loss of ∼0.14 and 0.2 dB/cm as well as high resonant buildup of 473 and 327, respectively. Such high-Q AlN-on-sapphire microresonators are believed to be very promising for on-chip nonlinear optics.

Original language	English
Pages (from-to)	587-594
Number of pages	8
Journal	Optics Express
Volume	25
Issue number	2
DOIs	https://doi.org/10.1364/OE.25.000587
Publication status	Published - 23 Jan 2017
Externally published	Yes

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title = "Aluminum nitride-on-sapphire platform for integrated high-Q microresonators",

abstract = "We demonstrate aluminum nitride (AlN) on sapphire as a novel platform for integrated optics. High-confinement AlN microring resonators are realized by adopting a partially etched (pedestal) waveguide to relax the required etching selectivity for exact pattern transfer. A wide taper is employed at the chip end facets to ensure a low fiber-to-chip coupling loss of ∼2.8 dB/facet for both transverse-electric (TE) and transverse-magnetic (TM) modes. Furthermore, the intrinsic quality factors (Qint) recorded with a high-resolution linewidth measurement are up to ∼2.5 and 1.9 million at telecom band for fundamental TE00 and TM00 modes, corresponding to a low intracavity propagation loss of ∼0.14 and 0.2 dB/cm as well as high resonant buildup of 473 and 327, respectively. Such high-Q AlN-on-sapphire microresonators are believed to be very promising for on-chip nonlinear optics.",

author = "Xianwen Liu and Changzheng Sun and Bing Xiong and Lai Wang and Jian Wang and Yanjun Han and Zhibiao Hao and Hongtao Li and Yi Luo and Jianchang Yan and Tongbo Wei and Yun Zhang and Junxi Wang",

note = "Publisher Copyright: {\textcopyright} 2017 Optical Society of America.",

year = "2017",

month = jan,

day = "23",

doi = "10.1364/OE.25.000587",

language = "English",

volume = "25",

pages = "587--594",

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T1 - Aluminum nitride-on-sapphire platform for integrated high-Q microresonators

AU - Liu, Xianwen

AU - Sun, Changzheng

AU - Xiong, Bing

AU - Wang, Lai

AU - Wang, Jian

AU - Han, Yanjun

AU - Hao, Zhibiao

AU - Li, Hongtao

AU - Luo, Yi

AU - Yan, Jianchang

AU - Wei, Tongbo

AU - Zhang, Yun

AU - Wang, Junxi

PY - 2017/1/23

Y1 - 2017/1/23

N2 - We demonstrate aluminum nitride (AlN) on sapphire as a novel platform for integrated optics. High-confinement AlN microring resonators are realized by adopting a partially etched (pedestal) waveguide to relax the required etching selectivity for exact pattern transfer. A wide taper is employed at the chip end facets to ensure a low fiber-to-chip coupling loss of ∼2.8 dB/facet for both transverse-electric (TE) and transverse-magnetic (TM) modes. Furthermore, the intrinsic quality factors (Qint) recorded with a high-resolution linewidth measurement are up to ∼2.5 and 1.9 million at telecom band for fundamental TE00 and TM00 modes, corresponding to a low intracavity propagation loss of ∼0.14 and 0.2 dB/cm as well as high resonant buildup of 473 and 327, respectively. Such high-Q AlN-on-sapphire microresonators are believed to be very promising for on-chip nonlinear optics.

AB - We demonstrate aluminum nitride (AlN) on sapphire as a novel platform for integrated optics. High-confinement AlN microring resonators are realized by adopting a partially etched (pedestal) waveguide to relax the required etching selectivity for exact pattern transfer. A wide taper is employed at the chip end facets to ensure a low fiber-to-chip coupling loss of ∼2.8 dB/facet for both transverse-electric (TE) and transverse-magnetic (TM) modes. Furthermore, the intrinsic quality factors (Qint) recorded with a high-resolution linewidth measurement are up to ∼2.5 and 1.9 million at telecom band for fundamental TE00 and TM00 modes, corresponding to a low intracavity propagation loss of ∼0.14 and 0.2 dB/cm as well as high resonant buildup of 473 and 327, respectively. Such high-Q AlN-on-sapphire microresonators are believed to be very promising for on-chip nonlinear optics.

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U2 - 10.1364/OE.25.000587

DO - 10.1364/OE.25.000587

M3 - Article

C2 - 28157948

AN - SCOPUS:85010208907

SN - 1094-4087

VL - 25

SP - 587

EP - 594

JO - Optics Express

JF - Optics Express

IS - 2

ER -

Aluminum nitride-on-sapphire platform for integrated high-Q microresonators

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