Aluminum, gallium, and indium nitrides

Electroceramics, III-nitrides such as AlN, GaN, InN and their alloys, are driving to significant applications including but not limited to acoustic devices, light-emitting diodes, laser diodes, microwave amplifiers, high-power switches, and solar cells. In this article, AlN, GaN, InN and their alloys are introduced from understanding the fundamental mechanical, crystal, electrical and optical properties, the material and device processes, to applications of typical optoelectronic and electronic devices. Due to the non-central-symmetric wurtzite structures, the performances of the heterostructure devices can be tuned/controlled with external strain under the piezotronic effect, which provides an effective way for device optimization and design. These Electroceramics and their devices have been and will continue to greatly promote the developments of energy harvesting, management and saving.