TY - JOUR
T1 - All-optical clocked flip-flops and random access memory cells using the nonlinear polarization rotation effect of low-polarization-dependent semiconductor optical amplifiers
AU - Wang, Yongjun
AU - Liu, Xinyu
AU - Tian, Qinghua
AU - Wang, Lina
AU - Xin, Xiangjun
N1 - Publisher Copyright:
© 2017 Elsevier B.V.
PY - 2018/3/1
Y1 - 2018/3/1
N2 - Basic configurations of various all-optical clocked flip-flops (FFs) and optical random access memory (RAM) based on the nonlinear polarization rotation (NPR) effect of low-polarization-dependent semiconductor optical amplifiers (SOA) are proposed. As the constituent elements, all-optical logic gates and all-optical SR latches are constructed by taking advantage of the SOA's NPR switch. Different all-optical FFs (AOFFs), including SR-, D-, T-, and JK-types as well as an optical RAM cell were obtained by the combination of the proposed all-optical SR latches and logic gates. The effectiveness of the proposed schemes were verified by simulation results and demonstrated by a D-FF and 1-bit RAM cell experimental system. The proposed all-optical clocked FFs and RAM cell are significant to all-optical signal processing.
AB - Basic configurations of various all-optical clocked flip-flops (FFs) and optical random access memory (RAM) based on the nonlinear polarization rotation (NPR) effect of low-polarization-dependent semiconductor optical amplifiers (SOA) are proposed. As the constituent elements, all-optical logic gates and all-optical SR latches are constructed by taking advantage of the SOA's NPR switch. Different all-optical FFs (AOFFs), including SR-, D-, T-, and JK-types as well as an optical RAM cell were obtained by the combination of the proposed all-optical SR latches and logic gates. The effectiveness of the proposed schemes were verified by simulation results and demonstrated by a D-FF and 1-bit RAM cell experimental system. The proposed all-optical clocked FFs and RAM cell are significant to all-optical signal processing.
KW - All-optical flip-flop
KW - Nonlinear polarization rotation effect
KW - Optical random access memory
KW - Semiconductor optical amplifiers
UR - http://www.scopus.com/inward/record.url?scp=85035765299&partnerID=8YFLogxK
U2 - 10.1016/j.optcom.2017.10.085
DO - 10.1016/j.optcom.2017.10.085
M3 - Article
AN - SCOPUS:85035765299
SN - 0030-4018
VL - 410
SP - 846
EP - 854
JO - Optics Communications
JF - Optics Communications
ER -