TY - JOUR
T1 - Aging-Aware LTPO DTCO for Large-Scale Integrated Circuit-Driven Flexible Intelligent Sensing System
AU - Zhang, Shuaidi
AU - Sun, Xiaofan
AU - Tang, Weiye
AU - Song, Yuanwei
AU - Zhou, Haitao
AU - Huang, Lu
AU - Sun, Zhongyi
AU - Li, Weiwei
AU - Ren, Qirui
AU - Geng, Di
AU - Wu, Zhicheng
AU - Yu, Zhinong
AU - Wang, Lingfei
AU - Zhang, Feng
AU - Li, Ling
N1 - Publisher Copyright:
© 1963-2012 IEEE.
PY - 2024/5/1
Y1 - 2024/5/1
N2 - The near-sensor paradigm is widely used in the artificial Intelligence of Things (AIoT) and other emerging applications that require high-performance digital circuits to perform embedded control and signal-processing calculations. This work presents a low-temperature polycrystalline silicon and oxide (LTPO) CMOS-based large-scale integrated circuit (IC) design approach to the flexible sensing and processing system via a unified high-accuracy compact model for LTPO thin-film transistors (TFTs), realizing circuit simulations and reliability evaluations. Grounded in multiple-trapping and releasing theory, the compact model is developed for both low-temperature poly-Si (LTPS) and indium-gallium-zinc oxide (IGZO) TFTs, with an error of much less than 100∼μ V for surface potential. This study delves into the significant aging effect of the positive bias temperature instabilities (PBTI) in IGZO TFTs using calibrated multivariable kinetic equations. The findings suggest that this approach has the potential to enhance the compact integration of sensing and processing systems through the use of advanced LTPO technology (∼ 6∼μ m). Furthermore, LTPO-CMOS-TFTs are used to implement digital circuits, achieving energy efficiency that is 3× higher than the state-of-the-art flexible processors. Compared with widely used pseudo-CMOS logic, complementary logic achieves the improvements of energy consumption and speed by the factors of 122.7 and 3.19, respectively.
AB - The near-sensor paradigm is widely used in the artificial Intelligence of Things (AIoT) and other emerging applications that require high-performance digital circuits to perform embedded control and signal-processing calculations. This work presents a low-temperature polycrystalline silicon and oxide (LTPO) CMOS-based large-scale integrated circuit (IC) design approach to the flexible sensing and processing system via a unified high-accuracy compact model for LTPO thin-film transistors (TFTs), realizing circuit simulations and reliability evaluations. Grounded in multiple-trapping and releasing theory, the compact model is developed for both low-temperature poly-Si (LTPS) and indium-gallium-zinc oxide (IGZO) TFTs, with an error of much less than 100∼μ V for surface potential. This study delves into the significant aging effect of the positive bias temperature instabilities (PBTI) in IGZO TFTs using calibrated multivariable kinetic equations. The findings suggest that this approach has the potential to enhance the compact integration of sensing and processing systems through the use of advanced LTPO technology (∼ 6∼μ m). Furthermore, LTPO-CMOS-TFTs are used to implement digital circuits, achieving energy efficiency that is 3× higher than the state-of-the-art flexible processors. Compared with widely used pseudo-CMOS logic, complementary logic achieves the improvements of energy consumption and speed by the factors of 122.7 and 3.19, respectively.
KW - Design-technology co-optimization (DTCO)
KW - flexible system
KW - low-temperature polycrystalline silicon and oxide (LTPO)
KW - near-sensor computing
UR - http://www.scopus.com/inward/record.url?scp=85190168757&partnerID=8YFLogxK
U2 - 10.1109/TED.2024.3383411
DO - 10.1109/TED.2024.3383411
M3 - Article
AN - SCOPUS:85190168757
SN - 0018-9383
VL - 71
SP - 3322
EP - 3328
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 5
ER -
