@inproceedings{c6c0222bfab548d0843005e4a06f7319,
title = "Ag/HfO2-based Threshold Switching Memristor as an Oscillatory Neuron",
abstract = "Artificial neuron with low-power feature is critical for the implement of neuromorphic systems. In this work, Ag/Hf02-based threshold switching memristor is used as an oscillatory neuron, due to its ultralow leakage current and small operation voltage. Low-temperature measurement is conducted to analyze the conduction mechanism. Furthermore, self-oscillation dynamics are investigated by simulation. The oscillation frequency is proportional to the input pulse voltage, which is suitable for performing neuronal functions (e.g., threshold, and fire).",
keywords = "Memristor, Neuron, Oscillation",
author = "Qilin Hua and Chunsheng Jiang and Weiguo Hu",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 ; Conference date: 08-04-2021 Through 11-04-2021",
year = "2021",
month = apr,
day = "8",
doi = "10.1109/EDTM50988.2021.9420814",
language = "English",
series = "2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021",
address = "United States",
}