Achieving EQE of 16,700% in P3HT:PC 71 BM based photodetectors by trap-assisted photomultiplication

Lingliang Li; Fujun Zhang; Jian Wang; Qiaoshi An; Qianqian Sun; Wenbin Wang; Jian Zhang; Feng Teng

doi:10.1038/srep09181

Achieving EQE of 16,700% in P3HT:PC 71 BM based photodetectors by trap-assisted photomultiplication

Lingliang Li, Fujun Zhang^*, Jian Wang, Qiaoshi An, Qianqian Sun, Wenbin Wang, Jian Zhang, Feng Teng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

191 Citations (Scopus)

Abstract

We report a trap-assisted photomultiplication (PM) phenomenon in solution-processed polymer photodetectors (PPDs) based on P3HT:PC 71 BM as the active layer, the maximum EQE of 16,700% is obtained for the PPDs with PC 71 BM doping weight ratio of 1%. The PM phenomenon is attributed to the enhanced hole tunneling injection assisted by trapped electrons in PC 71 BM near Al cathode, which can be demonstrated by the transient photocurrent curves and EQE spectra of PPDs with different PC 71 BM doping ratios. The positive effect of trapped electrons in PC 71 BM near Al cathode on the hole tunneling injection is further confirmed by the simulated optical field and exciton generation rate distributions in the active layer and the EQE spectra of PPDs with Al(1)/P3HT:PC 71 BM(100:1)/Al(2) device structure under forward and reverse biases. This discovery may open a new road for organic materials to be used in highly sensitive photodetectors while preserving the advantages of organic materials.

Original language	English
Article number	9181
Journal	Scientific Reports
Volume	5
DOIs	https://doi.org/10.1038/srep09181
Publication status	Published - 17 Mar 2015
Externally published	Yes

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title = "Achieving EQE of 16,700% in P3HT:PC 71 BM based photodetectors by trap-assisted photomultiplication",

abstract = "We report a trap-assisted photomultiplication (PM) phenomenon in solution-processed polymer photodetectors (PPDs) based on P3HT:PC 71 BM as the active layer, the maximum EQE of 16,700% is obtained for the PPDs with PC 71 BM doping weight ratio of 1%. The PM phenomenon is attributed to the enhanced hole tunneling injection assisted by trapped electrons in PC 71 BM near Al cathode, which can be demonstrated by the transient photocurrent curves and EQE spectra of PPDs with different PC 71 BM doping ratios. The positive effect of trapped electrons in PC 71 BM near Al cathode on the hole tunneling injection is further confirmed by the simulated optical field and exciton generation rate distributions in the active layer and the EQE spectra of PPDs with Al(1)/P3HT:PC 71 BM(100:1)/Al(2) device structure under forward and reverse biases. This discovery may open a new road for organic materials to be used in highly sensitive photodetectors while preserving the advantages of organic materials.",

author = "Lingliang Li and Fujun Zhang and Jian Wang and Qiaoshi An and Qianqian Sun and Wenbin Wang and Jian Zhang and Feng Teng",

year = "2015",

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T1 - Achieving EQE of 16,700% in P3HT:PC 71 BM based photodetectors by trap-assisted photomultiplication

AU - Li, Lingliang

AU - Zhang, Fujun

AU - Wang, Jian

AU - An, Qiaoshi

AU - Sun, Qianqian

AU - Wang, Wenbin

AU - Zhang, Jian

AU - Teng, Feng

PY - 2015/3/17

Y1 - 2015/3/17

N2 - We report a trap-assisted photomultiplication (PM) phenomenon in solution-processed polymer photodetectors (PPDs) based on P3HT:PC 71 BM as the active layer, the maximum EQE of 16,700% is obtained for the PPDs with PC 71 BM doping weight ratio of 1%. The PM phenomenon is attributed to the enhanced hole tunneling injection assisted by trapped electrons in PC 71 BM near Al cathode, which can be demonstrated by the transient photocurrent curves and EQE spectra of PPDs with different PC 71 BM doping ratios. The positive effect of trapped electrons in PC 71 BM near Al cathode on the hole tunneling injection is further confirmed by the simulated optical field and exciton generation rate distributions in the active layer and the EQE spectra of PPDs with Al(1)/P3HT:PC 71 BM(100:1)/Al(2) device structure under forward and reverse biases. This discovery may open a new road for organic materials to be used in highly sensitive photodetectors while preserving the advantages of organic materials.

AB - We report a trap-assisted photomultiplication (PM) phenomenon in solution-processed polymer photodetectors (PPDs) based on P3HT:PC 71 BM as the active layer, the maximum EQE of 16,700% is obtained for the PPDs with PC 71 BM doping weight ratio of 1%. The PM phenomenon is attributed to the enhanced hole tunneling injection assisted by trapped electrons in PC 71 BM near Al cathode, which can be demonstrated by the transient photocurrent curves and EQE spectra of PPDs with different PC 71 BM doping ratios. The positive effect of trapped electrons in PC 71 BM near Al cathode on the hole tunneling injection is further confirmed by the simulated optical field and exciton generation rate distributions in the active layer and the EQE spectra of PPDs with Al(1)/P3HT:PC 71 BM(100:1)/Al(2) device structure under forward and reverse biases. This discovery may open a new road for organic materials to be used in highly sensitive photodetectors while preserving the advantages of organic materials.

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Achieving EQE of 16,700% in P3HT:PC 71 BM based photodetectors by trap-assisted photomultiplication

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