Abstract
SiO2/ SiO2 nanocomposites dipped with silicon resin was ablated and the physical state and phase transformation were characterized. Trace impurity in raw material and compound obtained by chemical reaction were analyzed. Moreover, the high-temperature dielectric properties were investigated. On the basis of above, it is found that the impurity carbon and silicon carbide are the key factors influencing dielectric properties.
Original language | English |
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Pages (from-to) | 1239-1241 |
Number of pages | 3 |
Journal | Key Engineering Materials |
Volume | 336-338 II |
DOIs | |
Publication status | Published - 2007 |
Keywords
- Ablation
- High-temperature dielectric properties
- Silicon dioxide
- Transformation