A Study on Organic Thin-Film Transistors Using Hf-La Oxides with Different la Contents as Gate Dielectrics

Chuan Yu Han; Yuan Xiao Ma; Wing Man Tang; Xiao Li Wang; P. T. Lai

doi:10.1109/TED.2018.2797428

A Study on Organic Thin-Film Transistors Using Hf-La Oxides with Different la Contents as Gate Dielectrics

Chuan Yu Han, Yuan Xiao Ma, Wing Man Tang, Xiao Li Wang, P. T. Lai^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The effects of La content in HfLaO gate dielectric on the performance of pentacene organic thin-film transistor (OTFT) fabricated on Si have been studied. The OTFT with Hf_0.103La_0.897O_y gate dielectric shows high performance such as high carrier mobility of 3.45 cm² V¹. s¹ (132 times and 40 times higher than those of devices using Hf oxide and La oxide, respectively), small threshold voltage of-2.09 V, and negligible hysteresis of-0.029 V. Binding-energy shift of Hf 4f peak in the X-ray photoelectron spectroscopy spectrum indicates that La incorporation can passivate the oxygen vacancies in HfO₂. Atomic force microscope reveals that the La incorporation can reduce the surface roughness of the gate dielectric by suppressing the crystallization of HfO₂. Therefore, by using Hf_0.103La_0.897O_y as gate dielectric, OTFT with high carrier mobility and small threshold voltage can be obtained.

Original language	English
Pages (from-to)	1107-1112
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	3
DOIs	https://doi.org/10.1109/TED.2018.2797428
Publication status	Published - Mar 2018
Externally published	Yes

Keywords

Hf-La oxide
highκ dielectric
hysteresis
organic thin-film transistor (OTFT)

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10.1109/TED.2018.2797428

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title = "A Study on Organic Thin-Film Transistors Using Hf-La Oxides with Different la Contents as Gate Dielectrics",

abstract = "The effects of La content in HfLaO gate dielectric on the performance of pentacene organic thin-film transistor (OTFT) fabricated on Si have been studied. The OTFT with Hf0.103La0.897Oy gate dielectric shows high performance such as high carrier mobility of 3.45 cm2 V1. s1 (132 times and 40 times higher than those of devices using Hf oxide and La oxide, respectively), small threshold voltage of-2.09 V, and negligible hysteresis of-0.029 V. Binding-energy shift of Hf 4f peak in the X-ray photoelectron spectroscopy spectrum indicates that La incorporation can passivate the oxygen vacancies in HfO2. Atomic force microscope reveals that the La incorporation can reduce the surface roughness of the gate dielectric by suppressing the crystallization of HfO2. Therefore, by using Hf0.103La0.897Oy as gate dielectric, OTFT with high carrier mobility and small threshold voltage can be obtained.",

keywords = "Hf-La oxide, highκ dielectric, hysteresis, organic thin-film transistor (OTFT)",

author = "Han, {Chuan Yu} and Ma, {Yuan Xiao} and Tang, {Wing Man} and Wang, {Xiao Li} and Lai, {P. T.}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2018",

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doi = "10.1109/TED.2018.2797428",

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T1 - A Study on Organic Thin-Film Transistors Using Hf-La Oxides with Different la Contents as Gate Dielectrics

AU - Han, Chuan Yu

AU - Ma, Yuan Xiao

AU - Tang, Wing Man

AU - Wang, Xiao Li

AU - Lai, P. T.

PY - 2018/3

Y1 - 2018/3

N2 - The effects of La content in HfLaO gate dielectric on the performance of pentacene organic thin-film transistor (OTFT) fabricated on Si have been studied. The OTFT with Hf0.103La0.897Oy gate dielectric shows high performance such as high carrier mobility of 3.45 cm2 V1. s1 (132 times and 40 times higher than those of devices using Hf oxide and La oxide, respectively), small threshold voltage of-2.09 V, and negligible hysteresis of-0.029 V. Binding-energy shift of Hf 4f peak in the X-ray photoelectron spectroscopy spectrum indicates that La incorporation can passivate the oxygen vacancies in HfO2. Atomic force microscope reveals that the La incorporation can reduce the surface roughness of the gate dielectric by suppressing the crystallization of HfO2. Therefore, by using Hf0.103La0.897Oy as gate dielectric, OTFT with high carrier mobility and small threshold voltage can be obtained.

AB - The effects of La content in HfLaO gate dielectric on the performance of pentacene organic thin-film transistor (OTFT) fabricated on Si have been studied. The OTFT with Hf0.103La0.897Oy gate dielectric shows high performance such as high carrier mobility of 3.45 cm2 V1. s1 (132 times and 40 times higher than those of devices using Hf oxide and La oxide, respectively), small threshold voltage of-2.09 V, and negligible hysteresis of-0.029 V. Binding-energy shift of Hf 4f peak in the X-ray photoelectron spectroscopy spectrum indicates that La incorporation can passivate the oxygen vacancies in HfO2. Atomic force microscope reveals that the La incorporation can reduce the surface roughness of the gate dielectric by suppressing the crystallization of HfO2. Therefore, by using Hf0.103La0.897Oy as gate dielectric, OTFT with high carrier mobility and small threshold voltage can be obtained.

KW - Hf-La oxide

KW - highκ dielectric

KW - hysteresis

KW - organic thin-film transistor (OTFT)

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IS - 3

ER -

A Study on Organic Thin-Film Transistors Using Hf-La Oxides with Different la Contents as Gate Dielectrics

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Keywords

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