Cheng, W., Liang, R., Hua, Q., Zhuo, Z., Chen, W., Zhang, S., Liu, Y., Zhao, L., & Xu, J. (2019). A novel steep slope hybrid InGaZnO TFT with negative DIBL improvement based on the Ag/HfO2 threshold switching device. Applied Physics Express, 12(9), Article 091002. https://doi.org/10.7567/1882-0786/ab3893
Cheng, Weijun ; Liang, Renrong ; Hua, Qilin et al. / A novel steep slope hybrid InGaZnO TFT with negative DIBL improvement based on the Ag/HfO2 threshold switching device. In: Applied Physics Express. 2019 ; Vol. 12, No. 9.
@article{7a700ffece4a47bc97e5306c5695e0f1,
title = "A novel steep slope hybrid InGaZnO TFT with negative DIBL improvement based on the Ag/HfO2 threshold switching device",
abstract = "We present a steep slope hybrid thin film transistor (TFT) that integrates an Ag/HfO2 based threshold switching (TS) with a ferroelectric HfZrO gated InGaZnO TFT. The hybrid TFT shows a minimum subthreshold swing of 16 mV decade. The negative differential resistance effect (NDR) was observed during the switching process of the TS. And the InGaZnO TFT shows a negative drain-induced barrier lowering (DIBL) effect. Furthermore, a Verilog-A model is developed to simulate the hybrid TFT. All of these suggests the as-fabricated hybrid TFT is suitable for low power TFT based applications.",
author = "Weijun Cheng and Renrong Liang and Qilin Hua and Ziting Zhuo and Wenjie Chen and Shuqin Zhang and Yu Liu and Linyuan Zhao and Jun Xu",
note = "Publisher Copyright: {\textcopyright} 2019 The Japan Society of Applied Physics.",
year = "2019",
month = sep,
day = "1",
doi = "10.7567/1882-0786/ab3893",
language = "English",
volume = "12",
journal = "Applied Physics Express",
issn = "1882-0778",
publisher = "Japan Society of Applied Physics",
number = "9",
}
Cheng, W, Liang, R, Hua, Q, Zhuo, Z, Chen, W, Zhang, S, Liu, Y, Zhao, L & Xu, J 2019, 'A novel steep slope hybrid InGaZnO TFT with negative DIBL improvement based on the Ag/HfO2 threshold switching device', Applied Physics Express, vol. 12, no. 9, 091002. https://doi.org/10.7567/1882-0786/ab3893
A novel steep slope hybrid InGaZnO TFT with negative DIBL improvement based on the Ag/HfO2 threshold switching device. / Cheng, Weijun; Liang, Renrong
; Hua, Qilin et al.
In:
Applied Physics Express, Vol. 12, No. 9, 091002, 01.09.2019.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - A novel steep slope hybrid InGaZnO TFT with negative DIBL improvement based on the Ag/HfO2 threshold switching device
AU - Cheng, Weijun
AU - Liang, Renrong
AU - Hua, Qilin
AU - Zhuo, Ziting
AU - Chen, Wenjie
AU - Zhang, Shuqin
AU - Liu, Yu
AU - Zhao, Linyuan
AU - Xu, Jun
N1 - Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
PY - 2019/9/1
Y1 - 2019/9/1
N2 - We present a steep slope hybrid thin film transistor (TFT) that integrates an Ag/HfO2 based threshold switching (TS) with a ferroelectric HfZrO gated InGaZnO TFT. The hybrid TFT shows a minimum subthreshold swing of 16 mV decade. The negative differential resistance effect (NDR) was observed during the switching process of the TS. And the InGaZnO TFT shows a negative drain-induced barrier lowering (DIBL) effect. Furthermore, a Verilog-A model is developed to simulate the hybrid TFT. All of these suggests the as-fabricated hybrid TFT is suitable for low power TFT based applications.
AB - We present a steep slope hybrid thin film transistor (TFT) that integrates an Ag/HfO2 based threshold switching (TS) with a ferroelectric HfZrO gated InGaZnO TFT. The hybrid TFT shows a minimum subthreshold swing of 16 mV decade. The negative differential resistance effect (NDR) was observed during the switching process of the TS. And the InGaZnO TFT shows a negative drain-induced barrier lowering (DIBL) effect. Furthermore, a Verilog-A model is developed to simulate the hybrid TFT. All of these suggests the as-fabricated hybrid TFT is suitable for low power TFT based applications.
UR - http://www.scopus.com/inward/record.url?scp=85072823219&partnerID=8YFLogxK
U2 - 10.7567/1882-0786/ab3893
DO - 10.7567/1882-0786/ab3893
M3 - Article
AN - SCOPUS:85072823219
SN - 1882-0778
VL - 12
JO - Applied Physics Express
JF - Applied Physics Express
IS - 9
M1 - 091002
ER -
Cheng W, Liang R, Hua Q, Zhuo Z, Chen W, Zhang S et al. A novel steep slope hybrid InGaZnO TFT with negative DIBL improvement based on the Ag/HfO2 threshold switching device. Applied Physics Express. 2019 Sept 1;12(9):091002. doi: 10.7567/1882-0786/ab3893