A novel steep slope hybrid InGaZnO TFT with negative DIBL improvement based on the Ag/HfO2 threshold switching device

Weijun Cheng*, Renrong Liang, Qilin Hua, Ziting Zhuo, Wenjie Chen, Shuqin Zhang, Yu Liu, Linyuan Zhao, Jun Xu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We present a steep slope hybrid thin film transistor (TFT) that integrates an Ag/HfO2 based threshold switching (TS) with a ferroelectric HfZrO gated InGaZnO TFT. The hybrid TFT shows a minimum subthreshold swing of 16 mV decade. The negative differential resistance effect (NDR) was observed during the switching process of the TS. And the InGaZnO TFT shows a negative drain-induced barrier lowering (DIBL) effect. Furthermore, a Verilog-A model is developed to simulate the hybrid TFT. All of these suggests the as-fabricated hybrid TFT is suitable for low power TFT based applications.

Original languageEnglish
Article number091002
JournalApplied Physics Express
Volume12
Issue number9
DOIs
Publication statusPublished - 1 Sept 2019
Externally publishedYes

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Cheng, W., Liang, R., Hua, Q., Zhuo, Z., Chen, W., Zhang, S., Liu, Y., Zhao, L., & Xu, J. (2019). A novel steep slope hybrid InGaZnO TFT with negative DIBL improvement based on the Ag/HfO2 threshold switching device. Applied Physics Express, 12(9), Article 091002. https://doi.org/10.7567/1882-0786/ab3893