A novel integrated power inductor in silicon substrate for ultra-compact power supplies

Mingliang Wang*, Jiping Li, Khai D.T. Ngo, Huikai Xie

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

23 Citations (Scopus)

Abstract

A novel silicon-based inductor, power inductor in silicon, or PIiS, has been proposed and experimentally demonstrated. The PIiS is fabricated at wafer level using a silicon molding micromachining technique, in which 200 μm thick copper windings are embedded into a silicon substrate and both sides of the substrate are capped with a polymer-magnetic power composite. Through-silicon vias (TSVs) and copper routings are also added so that a PIiS can be directly used as a surface mountable packaging substrate. A 3x3x0.6 mm3 PIiS with a measured inductance of 390 nH has been fabricated. The Q factor of this PIiS is 10 at 6 MHz. An ultra compact buck converter has been made by surface mounting off-shelf power ICs and capacitors on a PIiS. The buck converter is 3x3x1.2 mm3, which has successfully delivered 500 mA at 1.8V with an 80% efficiency at 6 MHz.

Original languageEnglish
Title of host publicationAPEC 2010 - 25th Annual IEEE Applied Power Electronics Conference and Exposition
Pages2036-2041
Number of pages6
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event25th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2010 - Palm Springs, CA, United States
Duration: 21 Feb 201025 Feb 2010

Publication series

NameConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Conference

Conference25th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2010
Country/TerritoryUnited States
CityPalm Springs, CA
Period21/02/1025/02/10

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