A Multi-Band LNA Covering 17–38 GHz in 45 nm CMOS SOI

Fang Han; Xuzhi Liu; Chao Wang; Xiao Li; Quanwen Qi; Xiaoran Li; Zicheng Liu

doi:10.3390/electronics11193255

A Multi-Band LNA Covering 17–38 GHz in 45 nm CMOS SOI

Fang Han, Xuzhi Liu, Chao Wang, Xiao Li, Quanwen Qi, Xiaoran Li^*, Zicheng Liu^*

^*Corresponding author for this work

School of Integrated Circuits and Electronics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

This paper presents a multi-band low-noise amplifier (LNA) in the 45-nm CMOS silicon-on-insulator (SOI) process. The LNA consists of three stages, with the differential cascode amplifier as the core structure. The first stage is mainly responsible for input matching to ensure favourable noise characteristics and bandwidth, while the subsequent stages increase the gain. Moreover, the LNA utilizes baluns for input/output and interstage impedance matching. Switch capacitances are added to switch the three operating bands of the LNA, which cover 17–38 GHz overall. Measurement results show that the proposed LNA achieves a gain (S21) of 23.0 dB and a noise figure (NF) of 4.0 dB.

Original language	English
Article number	3255
Journal	Electronics (Switzerland)
Volume	11
Issue number	19
DOIs	https://doi.org/10.3390/electronics11193255
Publication status	Published - Oct 2022

Keywords

balun
cascode
low-noise amplifier (LNA)
multi-band
switch capacitance

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10.3390/electronics11193255

Cite this

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title = "A Multi-Band LNA Covering 17–38 GHz in 45 nm CMOS SOI",

abstract = "This paper presents a multi-band low-noise amplifier (LNA) in the 45-nm CMOS silicon-on-insulator (SOI) process. The LNA consists of three stages, with the differential cascode amplifier as the core structure. The first stage is mainly responsible for input matching to ensure favourable noise characteristics and bandwidth, while the subsequent stages increase the gain. Moreover, the LNA utilizes baluns for input/output and interstage impedance matching. Switch capacitances are added to switch the three operating bands of the LNA, which cover 17–38 GHz overall. Measurement results show that the proposed LNA achieves a gain (S21) of 23.0 dB and a noise figure (NF) of 4.0 dB.",

keywords = "balun, cascode, low-noise amplifier (LNA), multi-band, switch capacitance",

author = "Fang Han and Xuzhi Liu and Chao Wang and Xiao Li and Quanwen Qi and Xiaoran Li and Zicheng Liu",

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T1 - A Multi-Band LNA Covering 17–38 GHz in 45 nm CMOS SOI

AU - Han, Fang

AU - Liu, Xuzhi

AU - Wang, Chao

AU - Li, Xiao

AU - Qi, Quanwen

AU - Li, Xiaoran

AU - Liu, Zicheng

PY - 2022/10

Y1 - 2022/10

N2 - This paper presents a multi-band low-noise amplifier (LNA) in the 45-nm CMOS silicon-on-insulator (SOI) process. The LNA consists of three stages, with the differential cascode amplifier as the core structure. The first stage is mainly responsible for input matching to ensure favourable noise characteristics and bandwidth, while the subsequent stages increase the gain. Moreover, the LNA utilizes baluns for input/output and interstage impedance matching. Switch capacitances are added to switch the three operating bands of the LNA, which cover 17–38 GHz overall. Measurement results show that the proposed LNA achieves a gain (S21) of 23.0 dB and a noise figure (NF) of 4.0 dB.

AB - This paper presents a multi-band low-noise amplifier (LNA) in the 45-nm CMOS silicon-on-insulator (SOI) process. The LNA consists of three stages, with the differential cascode amplifier as the core structure. The first stage is mainly responsible for input matching to ensure favourable noise characteristics and bandwidth, while the subsequent stages increase the gain. Moreover, the LNA utilizes baluns for input/output and interstage impedance matching. Switch capacitances are added to switch the three operating bands of the LNA, which cover 17–38 GHz overall. Measurement results show that the proposed LNA achieves a gain (S21) of 23.0 dB and a noise figure (NF) of 4.0 dB.

KW - balun

KW - cascode

KW - low-noise amplifier (LNA)

KW - multi-band

KW - switch capacitance

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JO - Electronics (Switzerland)

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ER -

A Multi-Band LNA Covering 17–38 GHz in 45 nm CMOS SOI

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Keywords

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