TY - GEN
T1 - A Low-Cost and Low-Temperature Method to Realize Carbon Nanotube Conductor in Through-Silicon-Via
AU - Zhang, Ziyue
AU - Ding, Yingtao
AU - Yang, Baoyan
AU - Ren, Anrun
AU - Chen, Zhiming
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021
Y1 - 2021
N2 - Through-silicon-via (TSV) technology is the key to three-dimensional (3D) heterogeneous integration strategy. In this paper, a novel low-cost and low-temperature method to fabricate carbon nanotube (CNT) conductor in blind TSV is proposed. Based on a series of precise operations of the conductive water-based solution of metallic CNTs including coating, vacuum treatment, and spinning, dense CNTs are successfully filled into blind TSVs of various dimensions, which can serve as the TSV conductors. This method avoids the expensive and high-temperature processes to grow or transport CNT conductors in TSVs, and is compatible with other integration strategies. Moreover, together with the vacuum-assisted spin coating of polyimide (PI) liners, a low-cost and low-temperature fabrication flow for blind TSVs can be achieved. This work provides a promising method towards the fabrication and application of CNT based TSVs.
AB - Through-silicon-via (TSV) technology is the key to three-dimensional (3D) heterogeneous integration strategy. In this paper, a novel low-cost and low-temperature method to fabricate carbon nanotube (CNT) conductor in blind TSV is proposed. Based on a series of precise operations of the conductive water-based solution of metallic CNTs including coating, vacuum treatment, and spinning, dense CNTs are successfully filled into blind TSVs of various dimensions, which can serve as the TSV conductors. This method avoids the expensive and high-temperature processes to grow or transport CNT conductors in TSVs, and is compatible with other integration strategies. Moreover, together with the vacuum-assisted spin coating of polyimide (PI) liners, a low-cost and low-temperature fabrication flow for blind TSVs can be achieved. This work provides a promising method towards the fabrication and application of CNT based TSVs.
KW - carbon nanotubes (CNTs)
KW - low-cost and low-temperature process
KW - three-dimensional (3D) integration
KW - through-silicon-vias (TSVs)
UR - http://www.scopus.com/inward/record.url?scp=85126793904&partnerID=8YFLogxK
U2 - 10.1109/3DIC52383.2021.9687607
DO - 10.1109/3DIC52383.2021.9687607
M3 - Conference contribution
AN - SCOPUS:85126793904
T3 - IEEE International 3D System Integration Conference, 3DIC 2021
BT - IEEE International 3D System Integration Conference, 3DIC 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2021 IEEE International 3D System Integration Conference, 3DIC 2021
Y2 - 15 November 2021 through 18 November 2021
ER -