TY - JOUR
T1 - A Homogeneous, Reconfigurable, and Efficient Implementation of PUF in 3-D Selector-Free RRAM
AU - Wang, Yiming
AU - Huo, Qiang
AU - Xu, Xiaoxin
AU - Tan, Fei
AU - Gao, Rui
AU - Luo, Qing
AU - Yang, Yiming
AU - Ren, Qirui
AU - Zhao, Xiaojin
AU - Wang, Xinghua
AU - Lei, Dengyun
AU - Zhang, Feng
N1 - Publisher Copyright:
© 1963-2012 IEEE.
PY - 2021/5
Y1 - 2021/5
N2 - Hardware encryption primitives such as physical unclonable functions (PUFs) are used in power and cost limited Internet of Things (IoT) and computing on edge devices. Resistive random access memory (RRAM) PUF is proposed as an alternative to CMOS one. But due to the existence of transistors as selectors, it still shares the drawbacks of CMOS PUF. In this work, a homogeneous and efficient PUF was constructed out of 3-D selector-free RRAM. It is immune to ray attack and fault injection and features low power, thanks to the absence of transistors and high-resistance states of the RRAM cells. The inter-and intra-Hamming distances (HDs) are measured to be 50.02% and 0%, respectively, which well validates its uniqueness and reliability. Experimental results show that the proposed PUF can be operated with a low energy consumption of 144 fJ/bit, and a compact bit-cell area of 16 text F2/bit. The digital values in the cells can maintain for over 100 h at 85 °C, which is equivalent to 24 years under 40 °C. Besides, given that the selector-free structure renders the PUF instance homogeneous, the PUF instance has enhanced security performance against radiation.
AB - Hardware encryption primitives such as physical unclonable functions (PUFs) are used in power and cost limited Internet of Things (IoT) and computing on edge devices. Resistive random access memory (RRAM) PUF is proposed as an alternative to CMOS one. But due to the existence of transistors as selectors, it still shares the drawbacks of CMOS PUF. In this work, a homogeneous and efficient PUF was constructed out of 3-D selector-free RRAM. It is immune to ray attack and fault injection and features low power, thanks to the absence of transistors and high-resistance states of the RRAM cells. The inter-and intra-Hamming distances (HDs) are measured to be 50.02% and 0%, respectively, which well validates its uniqueness and reliability. Experimental results show that the proposed PUF can be operated with a low energy consumption of 144 fJ/bit, and a compact bit-cell area of 16 text F2/bit. The digital values in the cells can maintain for over 100 h at 85 °C, which is equivalent to 24 years under 40 °C. Besides, given that the selector-free structure renders the PUF instance homogeneous, the PUF instance has enhanced security performance against radiation.
KW - 3-D selector-free resistive random access memory (RRAM)
KW - Internet of Things (IoT) applications
KW - machine learning (ML) attacks
KW - physical unclonable functions (PUFs)
KW - radiation attacks
KW - security
UR - http://www.scopus.com/inward/record.url?scp=85103259745&partnerID=8YFLogxK
U2 - 10.1109/TED.2021.3066087
DO - 10.1109/TED.2021.3066087
M3 - Article
AN - SCOPUS:85103259745
SN - 0018-9383
VL - 68
SP - 2577
EP - 2581
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 5
M1 - 9385854
ER -