Abstract
This letter presents an L-band highly linear differential low noise amplifier (LNA) in a standard 90-nm CMOS process. A wide range derivative superposition technique is proposed to maximize the third-order intercept point (IP3), and at the same time, minimize the third-order intermodulation distortion (IMD3) over a wide input power range. The LNA chip achieves a measured OIP3 of +33.7 dBm and IMD3 of-65 dBc with-15 dBm input power. The measured peak gain and minimum noise figure are 15.4 dB and 1.36 dB at 1.27 GHz, respectively. The LNA chip consumes 40 mA from a 3.3-V supply.
| Original language | English |
|---|---|
| Article number | 7331676 |
| Pages (from-to) | 817-819 |
| Number of pages | 3 |
| Journal | IEEE Microwave and Wireless Components Letters |
| Volume | 25 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Dec 2015 |
Keywords
- CMOS
- IMD3
- Third-order derivative cancellation
- high linearity
- large-signal nonlinearity
- low noise amplifier (LNA)
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Gao, W., Chen, Z., Liu, Z., Cui, W., & Gui, X. (2015). A Highly Linear Low Noise Amplifier with Wide Range Derivative Superposition Method. IEEE Microwave and Wireless Components Letters, 25(12), 817-819. Article 7331676. https://doi.org/10.1109/LMWC.2015.2496793