A high-precision low-power capacitive sensor readout circuit

Yuqi Li*, Fang Han, Quanwen Qi, Xiaoran Li*, Zicheng Liu, Wei Li, Minglu Xu, Xinghua Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents a readout circuit for CMOSMEMS accelerometer sensors, including a current-to-voltage lownoise weak signal amplifier, a high-precision second-order singlebit quantization Sigma-Delta modulator and a digital filter. We analyse the main factors affecting the noise of the sample and hold circuit and ADC, and the methods to suppress noise and improve linearity. Meanwhile, we reduce power consumption by reducing the order of the modulator and designing it in discrete time when the accuracy could meet the specifications of the sensor header, and achieve monolithic integration of the accelerometer CMOSMEMS chip. Designedin TSMC 180 nm CMOS process, the proposed readout circuit achieve 16-bit high-precision effectivenumber-of-bits (ENOB) and 0.3 mW power consumption.

Original languageEnglish
Title of host publication2024 4th International Conference on Electronics, Circuits and Information Engineering, ECIE 2024
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-5
Number of pages5
ISBN (Electronic)9798350388312
DOIs
Publication statusPublished - 2024
Event4th International Conference on Electronics, Circuits and Information Engineering, ECIE 2024 - Hybrid, Hangzhou, China
Duration: 24 May 202426 May 2024

Publication series

Name2024 4th International Conference on Electronics, Circuits and Information Engineering, ECIE 2024

Conference

Conference4th International Conference on Electronics, Circuits and Information Engineering, ECIE 2024
Country/TerritoryChina
CityHybrid, Hangzhou
Period24/05/2426/05/24

Keywords

  • CMOS-MEMS
  • Correlated double sampling
  • Low-power
  • Sigma-Delta modulator

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