A general route towards defect and pore engineering in graphene

Guibai Xie, Rong Yang, Peng Chen, Jing Zhang, Xuezeng Tian, Shuang Wu, Jing Zhao, Meng Cheng, Wei Yang, Duoming Wang, Congli He, Xuedong Bai, Dongxia Shi*, Guangyu Zhang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

52 Citations (Scopus)

Abstract

Defect engineering in graphene is important for tailoring graphene's properties thus applicable in various applications such as porous membranes and ultra-capacitors. In this paper, we report a general route towards defect- and pore- engineering in graphene through remote plasma treatments. Oxygen plasma irradiation was employed to create homogenous defects in graphene with controllable density from a few to ≈103 (μm-2). The created defects can be further enlarged into nanopores by hydrogen plasma anisotropic etching with well-defined pore size of a few nm or above. The achieved smallest nanopores are ≈2 nm in size, showing the potential for ultra-small graphene nanopores fabrication. A general route towards defect- and pore- engineering in graphene through remote plasma treatments is reported. Oxygen plasma irradiation is employed to create homogenous defects in graphene with controllable density. The created defects can be further enlarged into nanopores by hydrogen plasma anisotropic etching with well-defined pore size. The achieved smallest nanopores are ≈2 nm in size.

Original languageEnglish
Pages (from-to)2280-2284
Number of pages5
JournalSmall
Volume10
Issue number11
DOIs
Publication statusPublished - 12 Jun 2014
Externally publishedYes

Keywords

  • Raman spectroscopy
  • defects
  • graphene
  • nanopores
  • plasma etching

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